K4B4G1646D-BYK00 vs H5AN8G6NCJR-XXC 对比
详细并排对比 K4B4G1646D-BYK00 出自 Samsung Electronics 和 H5AN8G6NCJR-xxC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 ✓ 量产中规格对比
| 参数 | K4B4G1646D-BYK00 | H5AN8G6NCJR-xxC |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $7.50 | $6.50 |
| 存储器类型 | DDR3L SDRAM | DDR4 SDRAM |
| Density | 4 Gb | 8 Gb |
| 存储组织 | 256M x 16 | 512M x 16 |
| 数据速率 | 1600 Mbps | 2666 Mbps (VKC speed grade) |
| 电源电压 | 1.35 V (also operates at 1.5 V) | — |
| 封装 | 96-ball TFBGA | 96-ball FBGA |
| Number of Terminals | 96 | — |
| 工作温度 | 0°C to 85°C | — |
| CAS 延迟 | Programmable | — |
| Additional Features | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| 无卤 | Yes | — |
| Package Shape | RECTANGULAR | — |
| Temperature Grade | OTHER | — |
| Supply Voltage (VDD) | — | 1.2 V |
| VPP Supply | — | 2.5 V |
| Operating Temperature (TC) | — | 0°C to 95°C |
| Number of Banks | — | 8 |
| Burst Length | — | 8, 4 (with burst chop) |
| On-Die Termination (ODT) | — | Supported |
| Self-Refresh | — | Temperature-compensated (TCSR) |
| 安装类型 | — | Surface Mount |