H5AN8G6NCJR-xxC - 8Gb DDR4 SDRAM 2666Mbps | SK Hynix
料号： H5AN8G6NCJR-xxC ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $8.5 | $8.50 |
| 10 | $7.8 | $78.00 |
| 100 | $7.2 | $720.00 |
| 500 | $6.8 | $3,400.00 |
| 1,000 | $6.5 | $6,500.00 |
H5AN8G6NCJR-xxC 概述
DDR4 SDRAM (Double Data Rate Fourth Generation Synchronous Dynamic Random Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to single-data-rate SDRAM. It is the industry standard for main memory in servers, desktops, laptops, and high-performance computing systems, offering higher bandwidth and lower power consumption than its predecessor DDR3. DDR4 operates at lower voltages (1.2V typical) and supports higher densities, making it essential for modern computing platforms.
Key features of the H5AN8G6NCJR-xxC include a data rate of 2666 Mbps (as indicated by the 'VKC' speed grade), a 1.2V power supply, and a x16 organization (8Gb density organized as 512M x 16). The device supports standard DDR4 features such as on-die termination (ODT), programmable read/write latencies, and burst lengths of 8 and 4 with burst chop. It is available in a 96-ball FBGA package, which is the standard for DDR4 memory components.
The H5AN8G6NCJR-xxC utilizes advanced CMOS process technology, enabling high-speed operation with low power consumption. The device includes a temperature-compensated self-refresh (TCSR) feature to reduce power in idle states, and supports a wide operating temperature range from 0°C to 95°C (TC) for standard operation. The memory is organized into 8 banks, providing efficient access patterns for high-bandwidth applications.
Typical applications include server main memory, desktop and laptop RAM modules, networking equipment, and high-performance embedded systems. The high density and bandwidth make it suitable for data-intensive workloads such as cloud computing, virtualization, and real-time analytics. The device is also used in memory modules (DIMMs/SO-DIMMs) for consumer and enterprise computing.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the PCB layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.2V supply and a separate VPP supply of 2.5V for wordline boost. Refer to the SK Hynix datasheet for detailed timing parameters and AC/DC operating conditions.
直接替换替代料： H5AN8G6NCJR-xxC ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： H5AN8G6NCJR-xxC （相同外形与封装尺寸） ——差异在于 Package, Density, Organization, Burst Length, CAS Latency.
快速对比工具——选择替代料号进行并排对比：
H5AN8G6NDJR-xxC
✅ 直接替换📋 参考替代料（不在目录中）
H5AN8G8NCJR-xxC
✅ 直接替换📋 参考替代料（不在目录中）
H5AN8G4NCJR-xxC
✅ 直接替换✓ 有现货
$8.5 / 个
查看数据手册 →H5AN8G6NAFR-xxC
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MT41K256M16HA-125:E
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$3.1 / 个
查看数据手册 →K4B4G1646D-BYK00
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$7.5 / 个
查看数据手册 →H5AN8G6NCJR-xxC 最大额定值与电气特性
| 存储器类型 | DDR4 SDRAM |
| Density | 8 Gb |
| 存储组织 | 512M x 16 |
| 数据速率 | 2666 Mbps (VKC speed grade) |
| Supply Voltage (VDD) | 1.2 V |
| VPP Supply | 2.5 V |
| Operating Temperature (TC) | 0°C to 95°C |
| 封装 | 96-ball FBGA |
| Number of Banks | 8 |
| Burst Length | 8, 4 (with burst chop) |
| On-Die Termination (ODT) | Supported |
| Self-Refresh | Temperature-compensated (TCSR) |
| RoHS | Compliant |
| Lead-Free | Yes |
| 安装类型 | Surface Mount |
H5AN8G6NCJR-xxC 引脚配置
| 引脚 A1 | VDD — Power supply (1.2V) |
| 引脚 A2 | DQ0 — Data input/output 0 |
| 引脚 A3 | DQ1 — Data input/output 1 |
| 引脚 B1 | VSS — Ground |
| 引脚 B2 | DQ2 — Data input/output 2 |
| 引脚 B3 | DQ3 — Data input/output 3 |
| 引脚 C1 | VDDQ — Data power supply (1.2V) |
| 引脚 C2 | DQS_t — Data strobe (true) |
| 引脚 C3 | DQS_c — Data strobe (complement) |
| 引脚 D1 | VSSQ — Data ground |
| 引脚 D2 | CK_t — Clock (true) |
| 引脚 D3 | CK_c — Clock (complement) |
典型应用
H5AN8G6NCJR-xxC 适用于 6 应用s: Server Main Memory, Desktop and Laptop RAM, Networking Equipment, Embedded Systems, High-Performance Computing, Consumer Electronics.
Server Main Memory
The H5AN8G6NCJR-xxC provides 8Gb density and 2666 Mbps bandwidth, making it ideal for server DIMM modules. Its high capacity supports virtualization, cloud computing, and large-scale data processing. The 1.2V operation reduces power consumption in data centers, while the 96-ball FBGA package enables high-density module designs. When used in RDIMMs or LRDIMMs, it delivers the performance needed for enterprise workloads.
推荐
Desktop and Laptop RAM
The H5AN8G6NCJR-xxC is used in SO-DIMM and UDIMM modules for consumer computing. Its 8Gb density allows 16GB modules with 16 devices, and the 2666 Mbps speed supports modern CPUs. The low 1.2V supply reduces heat generation, making it suitable for compact laptops. The x16 organization simplifies module design by reducing the number of devices needed for a 64-bit data bus.
推荐
Networking Equipment
In routers, switches, and network appliances, the H5AN8G6NCJR-xxC provides high-bandwidth memory for packet buffering and routing tables. Its 2666 Mbps data rate ensures fast processing of network traffic, while the 8Gb density supports large forwarding databases. The device's synchronous operation with both clock edges enables efficient data transfer in high-speed networking applications.
推荐
Embedded Systems
For high-performance embedded systems such as industrial PCs and edge computing devices, the H5AN8G6NCJR-xxC offers the density and bandwidth needed for real-time data processing. Its wide operating temperature range (0°C to 95°C) allows use in harsh environments. The 96-ball FBGA package is suitable for compact PCB designs, and the low power consumption is beneficial for power-constrained applications.
推荐
High-Performance Computing
The H5AN8G6NCJR-xxC is used in HPC systems where large memory capacity and high bandwidth are critical. Its 8Gb density allows building large memory pools, and the 2666 Mbps speed supports compute-intensive workloads like scientific simulations and AI training. The device's on-die termination and programmable latencies enable fine-tuning for maximum performance in multi-channel memory architectures.
推荐
Consumer Electronics
In high-end consumer devices such as gaming consoles and smart TVs, the H5AN8G6NCJR-xxC provides the memory bandwidth for smooth graphics and multitasking. Its 8Gb density supports large application footprints, and the 1.2V operation helps manage thermal budgets. The x16 organization is ideal for applications requiring a wide data bus, such as integrated graphics.
推荐
推荐产品汇总
工程参考数据： H5AN8G6NCJR-xxC ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | H5AN8G6NDJR-xxC | H5AN8G8NCJR-xxC | MT41K256M16HA-125:E |
|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | SK Hynix | SK Hynix | SK Hynix | Micron Technology |
| Density | 8 Gb | 8 Gb | 8 Gb | 4 Gb |
| Organization | 512M x 16 | 512M x 16 | 1G x 8 | 256M x 16 |
| Data Rate | 2666 Mbps | 2666 Mbps | 2666 Mbps | 2400 Mbps |
| Supply Voltage (VDD) | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant |
关键差异点
- Higher density than some alternatives （对比 MT41K256M16HA-125:E)
- Wider data bus (x16) （对比 H5AN8G8NCJR-xxC)
- Higher data rate （对比 MT41K256M16HA-125:E)
设计说明
Ensure stable 1.2V VDD and 2.5V VPP supplies. Use low-ESR decoupling capacitors (e.g., 0.1uF and 1uF) placed close to each VDD and VDDQ pin. The VPP supply is critical for wordline boost; inadequate decoupling can cause write failures.
Follow the PCB layout guidelines in the SK Hynix datasheet for DDR4 routing. Maintain controlled impedance for DQ, DQS, and clock signals (typically 40-50 ohms single-ended). Keep trace lengths matched within +/- 10 mils for data groups to ensure signal integrity at 2666 Mbps.
The device operates up to 95°C TC. In high-density modules, ensure adequate airflow or heatsinking to keep the junction temperature within limits. The 96-ball FBGA package has a thermal resistance of approximately 20°C/W; calculate power dissipation based on operating conditions.
合规信息
RoHS compliant per SK Hynix datasheet. AEC-Q100 not applicable for memory components.
