K4B4G1646E-BCMA vs K4B4G1646E-BYK0 对比
详细并排对比 K4B4G1646E-BCMA 出自 Samsung Electronics 和 K4B4G1646E-BYK0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K4B4G1646E-BCMA - 4Gb DDR3 SDRAM 1066MHz FBGA-96 | Samsung
K4B4G1646E-BCMA ✓ 量产中
规格对比
| 参数 | K4B4G1646E-BCMA | K4B4G1646E-BYK0 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.77 | $1.80 |
| 存储器类型 | DDR3 SDRAM | DDR3L SDRAM |
| Density | 4 Gbit | 4 Gb |
| 存储组织 | 256M x 16 | 256M x 16 |
| Clock / Data Rate | 1066 MHz / 1066 Mbps per data pin | — |
| 电源电压 | 1.425 V to 1.575 V (1.5 V nominal) | 1.35 V (1.283 V to 1.45 V) |
| 工作温度 | 0C to +95C | 0°C to +95°C (TC) |
| 封装 | FBGA-96 (7.5 x 13.3 mm) | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Operating Supply Current (IDD) | 55 mA | — |
| Standby Current | 2 mA | — |
| Auto Precharge | Yes | Yes |
| Asynchronous Reset | Yes | Yes |
| On-Die Termination (ODT) | Dynamic ODT supported | — |
| ZQ Calibration | Yes | Yes |
| Data Mask Function | Yes | — |
| 安装类型 | Surface Mount (BGA) | — |
| RoHS 状态 | Compliant | — |
| 数据速率 | — | DDR3-1600 (800 MHz) |
| CAS 延迟 | — | 11 (CL-tRCD-tRP) |
| Burst Length | — | 8 (fixed), 4 (burst chop) |
| On-Die Termination | — | Yes (dynamic ODT) |
| Self-Refresh | — | Yes |
| Data Mask | — | Yes |
| RoHS | — | Compliant |