K4B4G1646E-BCMA vs K4B4G1646E-BYK0 Comparison

Detailed side-by-side comparison of K4B4G1646E-BCMA by Samsung Electronics and K4B4G1646E-BYK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4B4G1646E-BCMA K4B4G1646E-BCMA - 4Gb DDR3 SDRAM 1066MHz FBGA-96 | Samsung

K4B4G1646E-BCMA - 4Gb DDR3 SDRAM 1066MHz FBGA-96 | Samsung

K4B4G1646E-BCMA ✓ Active
Samsung Electronics
K4B4G1646E-BYK0 K4B4G1646E-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung

K4B4G1646E-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung

K4B4G1646E-BYK0 ✓ Active

Specification Comparison

Parameter K4B4G1646E-BCMA K4B4G1646E-BYK0
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock —
Unit Price (USD) $3.77 —
Memory Type DDR3 SDRAM DDR3L SDRAM
Density 4 Gbit 4 Gb
Organization 256M x 16 256M x 16
Clock / Data Rate 1066 MHz / 1066 Mbps per data pin —
Supply Voltage 1.425 V to 1.575 V (1.5 V nominal) 1.35 V (1.283 V to 1.45 V)
Operating Temperature 0C to +95C 0°C to +95°C (TC)
Package FBGA-96 (7.5 x 13.3 mm) 96-ball FBGA (13 x 9 mm, 0.8 mm pitch)
Operating Supply Current (IDD) 55 mA —
Standby Current 2 mA —
Auto Precharge Yes Yes
Asynchronous Reset Yes Yes
On-Die Termination (ODT) Dynamic ODT supported —
ZQ Calibration Yes Yes
Data Mask Function Yes —
Mounting Type Surface Mount (BGA) —
RoHS Status Compliant —
Data Rate — DDR3-1600 (800 MHz)
CAS Latency — 11 (CL-tRCD-tRP)
Burst Length — 8 (fixed), 4 (burst chop)
On-Die Termination — Yes (dynamic ODT)
Self-Refresh — Yes
Data Mask — Yes
RoHS — Compliant

Datasheets & Resources

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