K4RAH086VB-BCWM vs K4RAH086VB-BIQK 对比
详细并排对比 K4RAH086VB-BCWM 出自 Samsung Electronics 和 K4RAH086VB-BIQK 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K4RAH086VB-BCWM - DDR5 16Gb 5600Mbps SDRAM | Samsung Semiconductor
K4RAH086VB-BCWM ✓ 量产中
规格对比
| 参数 | K4RAH086VB-BCWM | K4RAH086VB-BIQK |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $44.55 | $4.25 |
| 存储器类型 | DDR5 SDRAM | DDR5 SDRAM |
| 存储容量 | 16 Gb | — |
| 存储组织 | 2G x 8 | 2G x 8 |
| 数据速率 | 5600 Mbps | 4800 Mbps/pin |
| 电源电压 | 1.1 V | — |
| 接口 | DDR5 (parallel) | DDR5 (CA reduced pin count) |
| 封装 | FBGA-82 | 82FBGA |
| 安装类型 | Surface Mount | — |
| Technology | DRAM (volatile) | — |
| Speed Grade | BCWM | BIQK (-BIQK bin) |
| 工作温度 | Commercial temperature range (per datasheet) | [DATA_NEEDED: operating temperature range] |
| ECC | On-die ECC | On-die ECC (DDR5 standard) |
| Burst Length | 32 (BL32, DDR5 standard) | 16 / 32 |
| RoHS 状态 | Compliant | Compliant (Lead-Free & Halogen-Free per Samsung 82FBGA) |
| 生命周期状态 | Active | — |
| Sub-channel Architecture | Dual independent 32-bit sub-channels (per DDR5 spec) | — |
| Density | — | 16 Gb |
| Core Supply Voltage | — | 1.1 V (nominal) |
| Configuration | — | X8 |
| Operating Mode | — | DLL enabled |
| CAS 延迟 | — | [DATA_NEEDED: CAS latency (CL)] |
| Refresh | — | [DATA_NEEDED: refresh rate specification] |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |