K4RAH086VB-BCWM vs K4RBH086VB-BCWM 对比

详细并排对比 K4RAH086VB-BCWM 出自 Samsung Electronics 和 K4RBH086VB-BCWM 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K4RAH086VB-BCWM K4RAH086VB-BCWM - DDR5 16Gb 5600Mbps SDRAM | Samsung Semiconductor

K4RAH086VB-BCWM - DDR5 16Gb 5600Mbps SDRAM | Samsung Semiconductor

K4RAH086VB-BCWM ✓ 量产中
Samsung Electronics
K4RBH086VB-BCWM K4RBH086VB-BCWM - DDR5 16Gb DRAM 2Gx8 FBGA-82 | Samsung

K4RBH086VB-BCWM - DDR5 16Gb DRAM 2Gx8 FBGA-82 | Samsung

K4RBH086VB-BCWM ✓ 量产中

规格对比

参数 K4RAH086VB-BCWM K4RBH086VB-BCWM
品牌 Samsung Electronics Samsung Electronics
分类 DRAM Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $44.55 $0.00
存储器类型 DDR5 SDRAM DDR5 SDRAM
存储容量 16 Gb —
存储组织 2G x 8 2G x 8
数据速率 5600 Mbps [DATA_NEEDED: data rate for K4RBH speed grade (sister K4RAH086VB grade is 5600 Mbps)]
电源电压 1.1 V 1.1 V
接口 DDR5 (parallel) Parallel, DDR5
封装 FBGA-82 82-FBGA
安装类型 Surface Mount Surface Mount
Technology DRAM (volatile) DDR5 SDRAM
Speed Grade BCWM —
工作温度 Commercial temperature range (per datasheet) 0 C to 85 C
ECC On-die ECC —
Burst Length 32 (BL32, DDR5 standard) —
RoHS 状态 Compliant [DATA_NEEDED: RoHS status]
生命周期状态 Active —
Sub-channel Architecture Dual independent 32-bit sub-channels (per DDR5 spec) —
Density — 16 Gb
Product Status — Mass Production
Memory Format — Volatile (DRAM)
Manufacturer — Samsung Semiconductor
MSL 等级 — [DATA_NEEDED: moisture sensitivity level]
On-Die ECC — Yes (per JEDEC DDR5 specification)

数据手册与资源

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