K4RAH086VP-BCWM vs K4RAH086VB-BIQK 对比

详细并排对比 K4RAH086VP-BCWM 出自 Samsung Electronics 和 K4RAH086VB-BIQK 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K4RAH086VP-BCWM K4RAH086VP-BCWM - 16Gb DDR5 5600Mbps DRAM | Samsung

K4RAH086VP-BCWM - 16Gb DDR5 5600Mbps DRAM | Samsung

K4RAH086VP-BCWM ✓ 量产中
Samsung Electronics
K4RAH086VB-BIQK K4RAH086VB-BIQK - DDR5 16Gb 4800Mbps SDRAM | Samsung

K4RAH086VB-BIQK - DDR5 16Gb 4800Mbps SDRAM | Samsung

K4RAH086VB-BIQK ✓ 量产中

规格对比

参数 K4RAH086VP-BCWM K4RAH086VB-BIQK
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $4.25
存储器类型 DDR5 SDRAM DDR5 SDRAM
存储容量 16 Gb —
Memory Organization 2G x 8 —
数据速率 5600 Mbps/pin 4800 Mbps/pin
电源电压 1.1 V —
接口 Parallel DDR5 (CA reduced pin count)
Technology DRAM DDR5 —
Memory Format DRAM —
Volatile / Non-Volatile Volatile —
封装 [DATA_NEEDED: exact FBGA package code and body size] 82FBGA
安装类型 Surface Mount —
Packaging Tray —
Application Segment Industrial —
工作温度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
生命周期状态 Active —
RoHS 状态 unknown Compliant (Lead-Free & Halogen-Free per Samsung 82FBGA)
MSL 等级 [DATA_NEEDED: moisture sensitivity level] [DATA_NEEDED: moisture sensitivity level]
Density — 16 Gb
存储组织 — 2G x 8
Core Supply Voltage — 1.1 V (nominal)
Configuration — X8
Speed Grade — BIQK (-BIQK bin)
ECC — On-die ECC (DDR5 standard)
Burst Length — 16 / 32
Operating Mode — DLL enabled
CAS 延迟 — [DATA_NEEDED: CAS latency (CL)]
Refresh — [DATA_NEEDED: refresh rate specification]

数据手册与资源

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