K4RAH086VP-BCWM - 16Gb DDR5 5600Mbps DRAM | Samsung
料号： K4RAH086VP-BCWM ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
K4RAH086VP-BCWM 概述
DDR5 SDRAM (Double Data Rate 5 synchronous dynamic random-access memory) is the fifth generation of the DDR DRAM family standardized by JEDEC. Compared with DDR4, DDR5 doubles the bank groups, moves the power management IC onto the DIMM or package, and lowers the per-bit supply voltage, delivering higher bandwidth and lower power per transfer. In the memory hierarchy, this device sits at the component level: DRAM -> DDR5 SDRAM -> volatile memory -> semiconductor memory IC.
Key features include a 16 Gbit density per die organized as 2G x 8, a 5600 Mbps/pin transfer rate (equivalent to DDR5-5600 operation, PC5-44800 class bandwidth), and a 1.1 V core supply consistent with the JEDEC DDR5 specification. The parallel interface supports burst-oriented access with on-die ECC available in DDR5 devices for improved reliability.
Architecturally, the K4RAH086VP-BCWM belongs to Samsung's DDR5 component portfolio for industrial-class applications. Higher-speed operation shortens memory access latency at the system level, while the 1.1 V supply reduces dynamic power versus DDR4 1.2 V solutions.
Typical applications include industrial servers and storage controllers, embedded computing modules, network appliances, and data acquisition systems that require high-bandwidth main memory.
Design consideration: DDR5 signaling requires careful length-matched PCB routing and onboard PMIC voltage regulation; verify power-rail sequencing and on-die termination settings against the Samsung datasheet before layout.
This page synthesizes distributor stock data, cross-reference candidates, and engineering selection guidance not consolidated in the manufacturer datasheet.
直接替换替代料： K4RAH086VP-BCWM ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： K4RAH086VP-BCWM （相同外形与封装尺寸） ——差异在于 Package, Interface, Data Rate, Technology, Memory Format.
快速对比工具——选择替代料号进行并排对比：
K4RAH086VB-BIWM
✅ 直接替换✓ 有现货
$4.85 / 个
查看数据手册 →K4RAH086VB-BIQK
✅ 直接替换✓ 有现货
$4.25 / 个
查看数据手册 →K4RAH086VB-BCWM
✅ 直接替换✓ 有现货
$44.5455 / 个
查看数据手册 →K4RAH086VE-BCWM
✅ 直接替换✓ 有现货
$7.6 / 个
查看数据手册 →K4RAH086VP-BCWM 最大额定值与电气特性
| 存储器类型 | DDR5 SDRAM |
| 存储容量 | 16 Gb |
| Memory Organization | 2G x 8 |
| 数据速率 | 5600 Mbps/pin |
| 电源电压 | 1.1 V |
| 接口 | Parallel |
| Technology | DRAM DDR5 |
| Memory Format | DRAM |
| Volatile / Non-Volatile | Volatile |
| 安装类型 | Surface Mount |
| Packaging | Tray |
| Application Segment | Industrial |
| 生命周期状态 | Active |
| RoHS 状态 | unknown |
K4RAH086VP-BCWM standard 引脚配置指南
K4RAH086VP-BCWM（standard 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： K4RAH086VP-BCWM.
请参阅 数据手册 以查看完整引脚配置。
典型应用
K4RAH086VP-BCWM 适用于 6 应用s: Industrial Servers and Storage Controllers, Embedded Computing and Edge Modules, Networking and Communication Equipment, Data Acquisition and Test Instrumentation, AI Inference at the Edge, Automated Test and Burn-In Systems.
Industrial Servers and Storage Controllers
Industrial servers and storage controllers demand main memory that combines high bandwidth with reliability under extended operating conditions. The Samsung K4RAH086VP-BCWM fits this role with its 16 Gb density, 5600 Mbps/pin DDR5 transfer rate, and 1.1 V supply; the x8 organization allows flexible bus widths when multiple components populate a channel. IBS Electronics explicitly positions this part for industrial applications. In a typical design, eight components form a 64-bit channel delivering roughly 4.5 GB/s per component (DDR5-5600 x8), while the lower 1.1 V rail reduces dynamic power versus DDR4 1.2 V solutions. DDR5's on-die features reduce controller load in RAID and caching workloads, and the industrial speed-grade suffix supports the thermal and longevity expectations of 24/7 factory-floor servers.
推荐
Embedded Computing and Edge Modules
Embedded computing modules (COM Express, SMARC, custom SBCs) require compact, high-density DRAM components to deliver server-like bandwidth in constrained form factors. The K4RAH086VP-BCWM provides 16 Gb per component organized as 2G x 8 at 5600 Mbps, letting a single 64-bit channel reach 32 GB with sixteen components, or 16 GB with eight. The 1.1 V operating voltage lowers both heat generation and power budget, which is critical for fanless edge enclosures. DDR5's split CA bus and on-die features simplify routing in dense stacked-module designs. Designers should pair the DRAM with a DDR5-capable SoC and a compliant PMIC, and follow Samsung's length-matching rules; the industrial temperature positioning of this part suits outdoor gateways, machine vision, and in-vehicle compute where consumer-grade memory would be marginal.
推荐
Networking and Communication Equipment
Routers, switches, and 5G network appliances rely on DRAM for packet buffers, flow tables, and control-plane software. The K4RAH086VP-BCWM's 5600 Mbps/pin data rate and 16 Gb density provide the throughput headroom for line-rate packet processing, while the x8 organization supports the 64-bit and 72-bit (with ECC) buses common in networking ASICs. Because network equipment runs continuously, the 1.1 V supply meaningfully reduces per-component idle and active power compared with DDR4 parts at the same bandwidth. In buffer-memory subsystems, place the DRAM components close to the ASIC with per-byte trace-length matching within the datasheet skew budget, and configure on-die termination to match the stackup impedance. Industrial-grade positioning of this Samsung part aligns with telecom central-office and outdoor-cabinet temperature expectations.
推荐
Data Acquisition and Test Instrumentation
High-speed data acquisition systems and test instruments stream ADC data into large memory buffers, demanding both capacity and sustained write bandwidth. A single K4RAH086VP-BCWM offers 16 Gb (2 GB) per component at 5600 Mbps per pin, so an eight-deep x8 bank achieves 16 GB with approximately 36 GB/s aggregate theoretical bandwidth before protocol overhead - sufficient to buffer multi-GSPS ADC streams. The 1.1 V rail limits local heating in dense instrument chassis. In these designs, the DRAM controller typically lives in an FPGA; verify DDR5 training support and use Samsung's write-leveling and read-training sequences. Choose this industrial-suffix part over commodity desktop DRAM because instrument vendors require long-term supply continuity and characterized operation across the full commercial-industrial temperature span.
推荐
AI Inference at the Edge
Edge AI appliances for vision inspection and video analytics need fast main memory to feed accelerators with model weights and frame buffers. The K4RAH086VP-BCWM delivers 16 Gb per component at 5600 Mbps, and a dual-channel design (16 x8 components, 4 GB each bank) provides tens of GB/s of sustained bandwidth - a practical fit for NPU or GPU SoCs streaming ResNet- or transformer-class models. The 2G x 8 organization and standard DDR5 parallel interface allow direct attachment to DDR5 host controllers without PHY bridges, reducing latency versus buffered module solutions. Power-sensitive edge enclosures benefit from the 1.1 V operation, which cuts DRAM subsystem power by roughly 8% at equal bandwidth versus DDR4 1.2 V. Follow Samsung's Vref and termination guidance for clean eye diagrams at full speed.
推荐
Automated Test and Burn-In Systems
Memory burn-in handlers and ATE load boards must exercise DDR5 components at full speed while monitoring parametric behavior. The K4RAH086VP-BCWM serves both as a device under test target class and as on-board reference memory in system-level test (SLT) fixtures, thanks to its mainstream 16 Gb x8 DDR5-5600 configuration that matches high-volume production memory. Its tray packaging simplifies automated pick-and-place into burn-in boards. Test engineers should account for the 1.1 V supply tolerance window and per-pin 5600 Mbps signaling when calibrating driver strengths and termination on the load board, and should verify the speed-bin suffix code so burn-in profiles match the qualified grade. Stock depth of 40,000+ pcs across distributors as of September 2026 supports volume test-house procurement.
推荐
推荐产品汇总
工程参考数据： K4RAH086VP-BCWM ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | K4RAH086VB-BIWM | K4RAH086VB-BCWM | K4RAH086VE-BCWM |
|---|---|---|---|---|
| Brand | Samsung Electronics (Samsung Semiconductor) | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Size | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Memory Organization | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 |
| Technology / Data Rate | DDR5, 5600 Mbps | DDR5, 5600 Mbps (family) | DDR5, 5600 Mbps (family) | DDR5, 5600 Mbps (family) |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Interface | Parallel | Parallel | Parallel | Parallel |
关键差异点
- DDR5-5600 bandwidth leadership over DDR4 site alternatives （对比 K4A8G085WB)
- x8 organization suited to standard 64/72-bit channels （对比 K4RAH165VB-BCQK)
- Industrial application positioning （对比 K4RAH086VB-BIWM)
设计说明
DDR5 at 5600 Mbps/pin requires strict fly-by routing of the CA bus and per-byte length matching of DQ/DQS groups. Keep trace-length skew within the Samsung datasheet window, maintain 40-ohm single-ended / 80-ohm differential reference impedances typical of DDR5 layouts, and route over continuous reference planes. Avoid via stubs on DQ nets; use back-drilling on thick boards. Note: impedance figures are common DDR5 layout practice - confirm exact tolerances in the Samsung datasheet signal-integrity section.
The K4RAH086VP-BCWM operates from a 1.1 V rail per the JEDEC DDR5 standard. In component-level (solder-down) designs, the host board must generate this rail with a DDR5-compliant PMIC including proper power-up sequencing and VDDQ termination. Estimated: a 16-bit channel of eight x8 components drawing typical DDR5-5600 idle currents of a few tens of mA per component results in roughly 1-2 W of standby subsystem power - size the buck converter and copper pours accordingly, and verify exact current figures against the Samsung datasheet IDD tables.
Samsung encodes speed bin, package, and temperature grade in the part-number suffix, so K4RAH086VP-BCWM and K4RAH086VB-BCWM are not guaranteed to be interchangeable in all platforms. Memory-controller training (read/write leveling, DFE calibration) is speed-bin sensitive; substituting a different suffix without re-qualifying can cause boot failures. Always decode the suffix from the official Samsung ordering-information table and validate boot on the target platform before switching supply sources.
合规信息
Compliance data was not stated on retrieved distributor pages; request material declarations and certificates from Samsung or the distributor at time of order.
