K4RBH165VB-BCQK vs K4RAH165VB-BCWM 对比

详细并排对比 K4RBH165VB-BCQK 出自 Samsung Electronics 和 K4RAH165VB-BCWM 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K4RBH165VB-BCQK K4RBH165VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung

K4RBH165VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung

K4RBH165VB-BCQK ✓ 量产中
Samsung Electronics
K4RAH165VB-BCWM K4RAH165VB-BCWM - 16Gb DDR5 SDRAM 1.1V FBGA | Samsung

K4RAH165VB-BCWM - 16Gb DDR5 SDRAM 1.1V FBGA | Samsung

K4RAH165VB-BCWM ✓ 量产中

规格对比

参数 K4RBH165VB-BCQK K4RAH165VB-BCWM
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $9.92
存储器类型 DDR5 SDRAM DDR5 SDRAM (volatile DRAM)
存储容量 16 Gb 16 Gb
存储组织 1G x 16 —
数据速率 4800 Mbps/pin —
Speed Grade BCQK (4800 Mbps) —
工作温度 0 C to +85 C 0C to +85C
Self Refresh Auto self-refresh —
Reset Function Asynchronous reset —
Error Correction On-chip (on-die) ECC —
Write Leveling Yes Yes
CRC Function Yes Yes
ZQ Calibration Yes Yes
电源电压 [DATA_NEEDED: core supply voltage (VDD), nominally 1.1 V for DDR5] 1.1 V
Package Type [DATA_NEEDED: exact package code, expected FBGA surface mount] —
安装类型 Surface Mount Surface Mount
RoHS 状态 [DATA_NEEDED: RoHS status] Compliant
Burst Length [DATA_NEEDED: burst length (BL16 per DDR5 standard)] —
Memory Organization — 1G x 16
Memory Interface — Parallel
Technology — DDR5
封装 — FBGA-106
Maximum Data Rate (DDR5 family) — up to 7200 Mbps
On-die ECC — Yes
Auto Self-Refresh — Yes
Asynchronous Reset — Yes
Speed Grade (suffix BCWM) — [DATA_NEEDED: speed grade / CAS latency]
Packaging — Tray

数据手册与资源

浏览全部产品 创建 BOM 获取报价