K4RBH165VB-BCQK vs K4RAH165VB-BCWM Vergleich
Detaillierter Direktvergleich von K4RBH165VB-BCQK von Samsung Electronics und K4RAH165VB-BCWM von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4RBH165VB-BCQK | K4RAH165VB-BCWM |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $9,92 |
| Speichertyp | DDR5 SDRAM | DDR5 SDRAM (volatile DRAM) |
| Speichergröße | 16 Gb | 16 Gb |
| Speicherorganisation | 1G x 16 | — |
| Datenrate | 4800 Mbps/pin | — |
| Speed Grade | BCQK (4800 Mbps) | — |
| Betriebstemperatur | 0 C to +85 C | 0C to +85C |
| Self Refresh | Auto self-refresh | — |
| Reset Function | Asynchronous reset | — |
| Error Correction | On-chip (on-die) ECC | — |
| Write Leveling | Yes | Yes |
| CRC Function | Yes | Yes |
| ZQ Calibration | Yes | Yes |
| Versorgungsspannung | [DATA_NEEDED: core supply voltage (VDD), nominally 1.1 V for DDR5] | 1.1 V |
| Package Type | [DATA_NEEDED: exact package code, expected FBGA surface mount] | — |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant |
| Burst Length | [DATA_NEEDED: burst length (BL16 per DDR5 standard)] | — |
| Memory Organization | — | 1G x 16 |
| Memory Interface | — | Parallel |
| Technology | — | DDR5 |
| Gehäuse | — | FBGA-106 |
| Maximum Data Rate (DDR5 family) | — | up to 7200 Mbps |
| On-die ECC | — | Yes |
| Auto Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Speed Grade (suffix BCWM) | — | [DATA_NEEDED: speed grade / CAS latency] |
| Packaging | — | Tray |