K4RBH165VB-BCQK vs K4RBH086VB-BCQK 对比

详细并排对比 K4RBH165VB-BCQK 出自 Samsung Electronics 和 K4RBH086VB-BCQK 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K4RBH165VB-BCQK K4RBH165VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung

K4RBH165VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung

K4RBH165VB-BCQK ✓ 量产中
Samsung Electronics
K4RBH086VB-BCQK K4RBH086VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung

K4RBH086VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung

K4RBH086VB-BCQK ✓ 量产中

规格对比

参数 K4RBH165VB-BCQK K4RBH086VB-BCQK
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $0.00
存储器类型 DDR5 SDRAM DDR5 SDRAM
存储容量 16 Gb —
存储组织 1G x 16 2G x 8
数据速率 4800 Mbps/pin 4800 Mbps
Speed Grade BCQK (4800 Mbps) —
工作温度 0 C to +85 C [DATA_NEEDED: operating temperature range]
Self Refresh Auto self-refresh —
Reset Function Asynchronous reset —
Error Correction On-chip (on-die) ECC —
Write Leveling Yes —
CRC Function Yes —
ZQ Calibration Yes —
电源电压 [DATA_NEEDED: core supply voltage (VDD), nominally 1.1 V for DDR5] —
Package Type [DATA_NEEDED: exact package code, expected FBGA surface mount] —
安装类型 Surface Mount Surface Mount
RoHS 状态 [DATA_NEEDED: RoHS status] Compliant
Burst Length [DATA_NEEDED: burst length (BL16 per DDR5 standard)] —
Density — 16 Gb
Supply Voltage (VDD) — 1.1 V
接口 — DDR5 (CA bus, ODECC)
On-die ECC — Yes
封装 — FBGA-82
Refresh — [DATA_NEEDED: refresh rate 32ms/64ms]
CAS Latency (CL) — [DATA_NEEDED: CAS latency at 4800 Mbps]
Power Supply Rails — VDD/VDDQ 1.1 V (PMIC on module)
MSL 等级 — [DATA_NEEDED: moisture sensitivity level]
Packaging — [DATA_NEEDED: tray or tape and reel standard quantity]

数据手册与资源

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