K4RCH046VM-2CCM vs K4RHE165VB-BCWM 对比

详细并排对比 K4RCH046VM-2CCM 出自 Samsung Electronics 和 K4RHE165VB-BCWM 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K4RCH046VM-2CCM K4RCH046VM-2CCM - DDR5 32Gb 5600Mbps DRAM | Samsung

K4RCH046VM-2CCM - DDR5 32Gb 5600Mbps DRAM | Samsung

K4RCH046VM-2CCM Nrnd
Samsung Electronics
K4RHE165VB-BCWM K4RHE165VB-BCWM - 24Gb DDR5 SDRAM 5600Mbps 1.1V | Samsung

K4RHE165VB-BCWM - 24Gb DDR5 SDRAM 5600Mbps 1.1V | Samsung

K4RHE165VB-BCWM ✓ 量产中

规格对比

参数 K4RCH046VM-2CCM K4RHE165VB-BCWM
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 不推荐新设计 有效
库存状态 有库存 有库存
单价(USD) $0.00 $0.00
存储器类型 DDR5 SDRAM DDR5 SDRAM
Density 32 Gb 24 Gb (3 GB)
存储组织 4G x 4 1G x 16
数据速率 5600 Mbps 5600 Mbps
电源电压 1.1 V 1.1 V
工作温度 0 to 85 C 0 to 85 C
封装 78-ball FBGA 106 FBGA
安装类型 Surface Mount Surface Mount (BGA)
Product Status Sample Mass Production
Access Latency (CL) [DATA_NEEDED: CAS latency] —
Refresh Rate [DATA_NEEDED: refresh rate] —
接口类型 [DATA_NEEDED: interface type] —
MSL 等级 [DATA_NEEDED: moisture sensitivity level] [DATA_NEEDED: MSL Level]
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS Status]
On-Die ECC [DATA_NEEDED: on-die ECC support] —
接口 — DDR5 (parallel, DDR)
Access Type — Synchronous
Clock Rate (nominal) — 2800 MHz (5600 MT/s DDR)
Ball Count — 106
Standard Pack Quantity — [DATA_NEEDED: Standard Pack Quantity]

数据手册与资源

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