K4RCH046VM-2CCM vs K4RHE165VB-BCWM Comparison

Detailed side-by-side comparison of K4RCH046VM-2CCM by Samsung Electronics and K4RHE165VB-BCWM by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4RCH046VM-2CCM K4RCH046VM-2CCM - DDR5 32Gb 5600Mbps DRAM | Samsung

K4RCH046VM-2CCM - DDR5 32Gb 5600Mbps DRAM | Samsung

K4RCH046VM-2CCM Nrnd
Samsung Electronics
K4RHE165VB-BCWM K4RHE165VB-BCWM - 24Gb DDR5 SDRAM 5600Mbps 1.1V | Samsung

K4RHE165VB-BCWM - 24Gb DDR5 SDRAM 5600Mbps 1.1V | Samsung

K4RHE165VB-BCWM ✓ Active

Specification Comparison

Parameter K4RCH046VM-2CCM K4RHE165VB-BCWM
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status NRND Active
Stock Status In Stock In Stock
Unit Price (USD) $0.00 $0.00
Memory Type DDR5 SDRAM DDR5 SDRAM
Density 32 Gb 24 Gb (3 GB)
Organization 4G x 4 1G x 16
Data Rate 5600 Mbps 5600 Mbps
Supply Voltage 1.1 V 1.1 V
Operating Temperature 0 to 85 C 0 to 85 C
Package 78-ball FBGA 106 FBGA
Mounting Type Surface Mount Surface Mount (BGA)
Product Status Sample Mass Production
Access Latency (CL) [DATA_NEEDED: CAS latency] —
Refresh Rate [DATA_NEEDED: refresh rate] —
Interface Type [DATA_NEEDED: interface type] —
MSL Level [DATA_NEEDED: moisture sensitivity level] [DATA_NEEDED: MSL Level]
RoHS Status [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS Status]
On-Die ECC [DATA_NEEDED: on-die ECC support] —
Interface — DDR5 (parallel, DDR)
Access Type — Synchronous
Clock Rate (nominal) — 2800 MHz (5600 MT/s DDR)
Ball Count — 106
Standard Pack Quantity — [DATA_NEEDED: Standard Pack Quantity]

Datasheets & Resources

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