K4RHE165VB-BCWM vs K4RHE086VB-BCWM 对比

详细并排对比 K4RHE165VB-BCWM 出自 Samsung Electronics 和 K4RHE086VB-BCWM 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K4RHE165VB-BCWM K4RHE165VB-BCWM - 24Gb DDR5 SDRAM 5600Mbps 1.1V | Samsung

K4RHE165VB-BCWM - 24Gb DDR5 SDRAM 5600Mbps 1.1V | Samsung

K4RHE165VB-BCWM ✓ 量产中
Samsung Electronics
K4RHE086VB-BCWM K4RHE086VB-BCWM - 24Gb DDR5 5600Mbps DRAM | Samsung

K4RHE086VB-BCWM - 24Gb DDR5 5600Mbps DRAM | Samsung

K4RHE086VB-BCWM ✓ 量产中

规格对比

参数 K4RHE165VB-BCWM K4RHE086VB-BCWM
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $7.65
存储器类型 DDR5 SDRAM DDR5 SDRAM
Density 24 Gb (3 GB) 24 Gb
存储组织 1G x 16 2G x 8
数据速率 5600 Mbps 5600 Mbps
电源电压 1.1 V 1.1 V
封装 106 FBGA 82 FBGA
安装类型 Surface Mount (BGA) Surface Mount
工作温度 0 to 85 C [DATA_NEEDED: operating temperature range]
Product Status Mass Production —
接口 DDR5 (parallel, DDR) DDR5 (JEDEC)
Access Type Synchronous —
Clock Rate (nominal) 2800 MHz (5600 MT/s DDR) —
Ball Count 106 —
RoHS 状态 [DATA_NEEDED: RoHS Status] unknown
MSL 等级 [DATA_NEEDED: MSL Level] —
Standard Pack Quantity [DATA_NEEDED: Standard Pack Quantity] —
Configuration — x8
Application Segment — Server / Data Center / Premium PC
Manufacturer — Samsung Semiconductor
Access Time / CAS Latency — [DATA_NEEDED: CAS latency]
On-Die ECC — [DATA_NEEDED: on-die ECC support]
Package Height — [DATA_NEEDED: package height]

数据手册与资源

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