K6F2016U4E-EF70T vs K6F3216U6M-EF70T 对比
详细并排对比 K6F2016U4E-EF70T 出自 Samsung Electro-Mechanics 和 K6F3216U6M-EF70T 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electro-Mechanics
K6F2016U4E-EF70T - 2Mbit Async SRAM 70ns 48-TFBGA | Samsung
K6F2016U4E-EF70T ✓ 量产中
规格对比
| 参数 | K6F2016U4E-EF70T | K6F3216U6M-EF70T |
|---|---|---|
| 品牌 | Samsung Electro-Mechanics | Samsung Electronics |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $6.10 |
| 存储器类型 | SRAM - Asynchronous | SRAM - Asynchronous |
| 存储容量 | 2 Mbit | 32 Mbit |
| 存储组织 | 128K x 16 | 2M x 16 |
| 接口 | Parallel | Parallel |
| Access Time (tAA) | 70 ns | — |
| Supply Voltage (VCC) | 2.7 V to 3.3 V | — |
| Technology | Full CMOS | Full CMOS Static RAM |
| 封装 | 48-TFBGA (6 x 7) | 55-TFBGA (7.5 x 12 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature Range] |
| Active Supply Current (ICC1) | [DATA_NEEDED: ICC1] | — |
| Standby Current (ICC2) | [DATA_NEEDED: ICC2 for 70 ns grade] | — |
| Control Signals | CE, OE, WE | — |
| Refresh Requirement | None (static RAM) | None (static memory) |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | NO (per third-party listing) |
| 湿敏等级（MSL） | [DATA_NEEDED: MSL level] | — |
| 电源电压 | — | 3 V |
| Access Time | — | 55 ns |
| Speed Grade | — | -EF70 (55 ns) |
| Standard Pack Qty | — | 2400 |
| Memory Composition | — | Volatile SRAM |