K6F2016U4E-EF70T vs K6F3216U6M-EF70T Comparison
Detailed side-by-side comparison of K6F2016U4E-EF70T by Samsung Electro-Mechanics and K6F3216U6M-EF70T by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electro-Mechanics
K6F2016U4E-EF70T - 2Mbit Async SRAM 70ns 48-TFBGA | Samsung
K6F2016U4E-EF70T ✓ Active
Specification Comparison
| Parameter | K6F2016U4E-EF70T | K6F3216U6M-EF70T |
|---|---|---|
| Brand | Samsung Electro-Mechanics | Samsung Electronics |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $6.10 |
| Memory Type | SRAM - Asynchronous | SRAM - Asynchronous |
| Memory Size | 2 Mbit | 32 Mbit |
| Organization | 128K x 16 | 2M x 16 |
| Interface | Parallel | Parallel |
| Access Time (tAA) | 70 ns | — |
| Supply Voltage (VCC) | 2.7 V to 3.3 V | — |
| Technology | Full CMOS | Full CMOS Static RAM |
| Package | 48-TFBGA (6 x 7) | 55-TFBGA (7.5 x 12 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature Range] |
| Active Supply Current (ICC1) | [DATA_NEEDED: ICC1] | — |
| Standby Current (ICC2) | [DATA_NEEDED: ICC2 for 70 ns grade] | — |
| Control Signals | CE, OE, WE | — |
| Refresh Requirement | None (static RAM) | None (static memory) |
| RoHS Status | [DATA_NEEDED: RoHS status] | NO (per third-party listing) |
| Moisture Sensitivity Level (MSL) | [DATA_NEEDED: MSL level] | — |
| Supply Voltage | — | 3 V |
| Access Time | — | 55 ns |
| Speed Grade | — | -EF70 (55 ns) |
| Standard Pack Qty | — | 2400 |
| Memory Composition | — | Volatile SRAM |