K6T0808C1D-DB70 vs K6T0808C1D-DB55 对比
详细并排对比 K6T0808C1D-DB70 出自 Samsung Electronics 和 K6T0808C1D-DB55 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K6T0808C1D-DB70 - 256Kbit (32Kx8) CMOS SRAM 70ns DIP-28 | Samsung
K6T0808C1D-DB70 ⚠ 最后一次采购
规格对比
| 参数 | K6T0808C1D-DB70 | K6T0808C1D-DB55 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 最后采购期 | Obsolete |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.40 | $3.05 |
| 存储器类型 | Volatile SRAM (Static RAM) | Asynchronous Static RAM (SRAM) |
| Memory Organization | 32K x 8 = 256 Kbit | — |
| Density | 256 Kbit (32,768 bytes) | 256 Kbit (32K x 8) |
| Access Time (tAA) | 70 ns | 70 ns (max) |
| Supply Voltage (VCC) | 4.5 V to 5.5 V | 5 V (typical; 4.5 V min per SRAM class) |
| Operating Current (ICC) | 60 mA (typical) | — |
| Standby Current (ISB1) | 15 uA (typical) | — |
| 工作温度 | 0C to +70C (commercial) | -40 C to +85 C (industrial) |
| 接口 | Parallel, asynchronous, TTL-compatible | — |
| Output Enable (OE) | Yes (active-low) | — |
| Write Enable (WE) | Yes (active-low) | — |
| Chip Enable | CE1 (active-low), CE2 (active-high) | — |
| 数据总线宽度 | 8 bits | — |
| 封装 | DIP-28 (600 mil, 'DB' code) | 28-pin TSOP1F (Type I, forward) |
| 安装类型 | Through-Hole | Surface Mount |
| Process Technology | CMOS (6T cell) | Samsung advanced CMOS |
| RoHS 状态 | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: verify on Samsung product page] |
| MSL 等级 | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL classification] |
| 存储组织 | — | 32,768 words x 8 bits |
| Standby Current | — | [DATA_NEEDED: typical ISB1 in uA] |
| Operating Current | — | [DATA_NEEDED: typical ICC in mA] |
| 输出类型 | — | Three-state, bidirectional DQs |
| I/O Logic Level | — | TTL-compatible |
| Data Retention Voltage | — | [DATA_NEEDED: VDR minimum in V] |
| Lead-Free | — | [DATA_NEEDED: confirm] |