K6T0808C1D-DB70 vs K6T0808C1D-DB55 Comparaison
Comparaison détaillée côte à côte de K6T0808C1D-DB70 par Samsung Electronics et K6T0808C1D-DB55 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K6T0808C1D-DB70 - 256Kbit (32Kx8) CMOS SRAM 70ns DIP-28 | Samsung
K6T0808C1D-DB70 ⚠ Dernier achat
Comparaison des spécifications
| Paramètre | K6T0808C1D-DB70 | K6T0808C1D-DB55 |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Dernier achat | Obsolete |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,40 | $3,05 |
| Type de mémoire | Volatile SRAM (Static RAM) | Asynchronous Static RAM (SRAM) |
| Memory Organization | 32K x 8 = 256 Kbit | — |
| Density | 256 Kbit (32,768 bytes) | 256 Kbit (32K x 8) |
| Access Time (tAA) | 70 ns | 70 ns (max) |
| Supply Voltage (VCC) | 4.5 V to 5.5 V | 5 V (typical; 4.5 V min per SRAM class) |
| Operating Current (ICC) | 60 mA (typical) | — |
| Standby Current (ISB1) | 15 uA (typical) | — |
| Température de fonctionnement | 0C to +70C (commercial) | -40 C to +85 C (industrial) |
| Interface | Parallel, asynchronous, TTL-compatible | — |
| Output Enable (OE) | Yes (active-low) | — |
| Write Enable (WE) | Yes (active-low) | — |
| Chip Enable | CE1 (active-low), CE2 (active-high) | — |
| Largeur du bus de données | 8 bits | — |
| Boîtier | DIP-28 (600 mil, 'DB' code) | 28-pin TSOP1F (Type I, forward) |
| Type de montage | Through-Hole | Surface Mount |
| Process Technology | CMOS (6T cell) | Samsung advanced CMOS |
| Statut RoHS | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: verify on Samsung product page] |
| Niveau MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL classification] |
| Organisation de la mémoire | — | 32,768 words x 8 bits |
| Standby Current | — | [DATA_NEEDED: typical ISB1 in uA] |
| Operating Current | — | [DATA_NEEDED: typical ICC in mA] |
| Type de sortie | — | Three-state, bidirectional DQs |
| I/O Logic Level | — | TTL-compatible |
| Data Retention Voltage | — | [DATA_NEEDED: VDR minimum in V] |
| Lead-Free | — | [DATA_NEEDED: confirm] |