K6X0808C1D-BF70T - 32Kx8 70ns Async SRAM 5V | Samsung
料号： K6X0808C1D-BF70T ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.66 | $16.60 |
| 100 | $1.42 | $142.00 |
| 500 | $1.22 | $610.00 |
| 1,000 | $1.05 | $1,050.00 |
K6X0808C1D-BF70T 概述
An asynchronous SRAM (static random-access memory) is a volatile memory IC that retains data as long as power is applied, without requiring refresh clocks or refresh cycles. In the memory hierarchy it sits below fast cache SRAM but above DRAM in interface simplicity: a parallel SRAM needs only address inputs, chip enable, output enable, write enable, and bidirectional data I/O, making it a power-management-friendly choice for embedded systems with 5V microprocessor buses.
Key features of the K6X0808C1D-BF70T include a 70 ns write cycle time (word and page), a wide 4.5V-5.5V operating supply, an industrial temperature range of -40C to +85C, and fully static operation requiring no clock or refresh. Data retention at low VCC supports battery-backup designs, and the CMOS process delivers low standby current compared with bipolar SRAM.
Architecturally, the device uses 15 address lines (A0-A14) to select one of 32,768 byte-wide locations. Access is controlled asynchronously by the CE, OE, and WE pins, giving glueless interfacing to classic 8-bit buses such as 8051 derivatives, 68HC11, and H8 MCUs, as well as FPGA emulated buses in modern retargeted designs.
Typical applications include industrial control systems, telecom line cards, legacy embedded controller memory expansion, test equipment scratchpad memory, and battery-backed data logging where 256Kbit of reliable parallel SRAM is required.
When designing, budget the 70 ns access time plus MCU bus turnaround for the full read cycle, and keep CE low time minimized to reduce standby power. Decouple VCC with a 0.1uF ceramic capacitor close to the package.
This page synthesizes distributor pricing, drop-in alternatives, pinout data, and practical design notes not found in the manufacturer datasheet.
直接替换替代料： K6X0808C1D-BF70T ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： K6X0808C1D-BF70T （相同外形与封装尺寸） ——差异在于 Package, Technology, Memory Type, Organization, Supply Voltage.
快速对比工具——选择替代料号进行并排对比：
K6X0808C1D-BF55
✅ 直接替换✓ 有现货
$1.85 / 个
查看数据手册 →K6X0808C1D-GF55000
✅ 直接替换✓ 有现货
$3.2 / 个
查看数据手册 →K6X0808C1D-BF70
✅ 直接替换✓ 有现货
$1.85 / 个
查看数据手册 →K6X0808C1D-BF70T 规格参数
| 存储器类型 | SRAM - Asynchronous |
| 存储容量 | 256 Kbit |
| Memory Organization | 32K x 8 |
| Memory Interface | Parallel |
| Access Time | 70 ns |
| Write Cycle Time - Word, Page | 70 ns |
| Voltage - Supply | 4.5 V to 5.5 V |
| 工作温度 | -40C to +85C (TA) |
| 封装 | 28-SOP |
| 安装类型 | Surface Mount |
| Process Technology | CMOS |
| Address Bus Width | 15 bit (A0-A14) |
| 数据总线宽度 | 8 bit (I/O0-I/O7) |
| Control Signals | CE, OE, WE |
| I/O Compatibility | TTL compatible |
| Refresh Requirement | None (fully static operation) |
| RoHS 状态 | Compliant |
K6X0808C1D-BF70T 引脚配置
| 引脚 1 | NC — Not connected (per datasheet) |
| 引脚 2 | A14 — Address input bit 14 |
| 引脚 3 | A12 — Address input bit 12 |
| 引脚 4 | A7 — Address input bit 7 |
| 引脚 5 | A6 — Address input bit 6 |
| 引脚 6 | A5 — Address input bit 5 |
| 引脚 7 | A4 — Address input bit 4 |
| 引脚 8 | A3 — Address input bit 3 |
| 引脚 9 | A2 — Address input bit 2 |
| 引脚 10 | A1 — Address input bit 1 |
| 引脚 11 | A0 — Address input bit 0 |
| 引脚 12 | I/O0 — Data input/output bit 0 |
| 引脚 13 | I/O1 — Data input/output bit 1 |
| 引脚 14 | I/O2 — Data input/output bit 2 |
| 引脚 15 | VSS — Ground |
| 引脚 16 | I/O3 — Data input/output bit 3 |
| 引脚 17 | I/O4 — Data input/output bit 4 |
| 引脚 18 | I/O5 — Data input/output bit 5 |
| 引脚 19 | I/O6 — Data input/output bit 6 |
| 引脚 20 | I/O7 — Data input/output bit 7 |
| 引脚 21 | CE — Chip enable (active low) |
| 引脚 22 | A10 — Address input bit 10 |
| 引脚 23 | OE — Output enable (active low) |
| 引脚 24 | A11 — Address input bit 11 |
| 引脚 25 | A9 — Address input bit 9 |
| 引脚 26 | A8 — Address input bit 8 |
| 引脚 27 | A13 — Address input bit 13 |
| 引脚 28 | VCC — Power supply, 4.5V to 5.5V |
典型应用
K6X0808C1D-BF70T 适用于 6 应用s: Industrial Control Systems, Legacy Embedded Controller Memory Expansion, Battery-Backed Data Logging, Telecom Line Cards, Test and Measurement Equipment, FPGA-Based Legacy System Retargeting.
Industrial Control Systems
The K6X0808C1D-BF70T fits industrial PLC I/O modules and process controllers that still use 5V parallel buses. Its 4.5V-5.5V supply range tolerates noisy industrial power rails, and the -40C to +85C operating range covers unconditioned cabinet environments. The 70 ns access time is fast enough for zero-wait-state operation with classic 8-bit MCU buses running up to roughly 14 MHz, so no bus wait states are needed. Because the device is fully static CMOS, it draws minimal standby current when CE is deasserted, reducing cabinet heat. Place the SRAM in the memory-map scratchpad region with CE gated from address decoding logic, and decouple VCC locally with 0.1uF ceramic capacitance for noise immunity in electrically harsh plants.
推荐
Legacy Embedded Controller Memory Expansion
The K6X0808C1D-BF70T is a natural external RAM for 8051, 68HC11, H8, and other 8-bit MCU systems whose on-chip RAM is exhausted. Its glueless parallel interface (15 address lines, 8 data lines, CE/OE/WE) connects directly to typical MCU external bus signals without programmable logic. The 70 ns timing meets the external-memory access cycles of most 12-24 MHz 8051 derivatives, which stretch reads over several clocks. The 32K x 8 organization fills exactly half of a 16-bit address space, simplifying decoder design with a single high address line driving CE. TTL-compatible I/O levels and 5V supply match the native I/O of these controllers, and the 28-SOP package suits both new layouts and repair of legacy boards.
推荐
Battery-Backed Data Logging
The K6X0808C1D-BF70T suits battery-backed logging modules because its fully static CMOS core retains data without refresh, and the family datasheet specifies low standby current and data retention at reduced VCC when CE is held high and writes are inhibited. A 32K x 8 array stores tens of thousands of sensor samples or event records at byte granularity, which is awkward to achieve with serial EEPROM. A supervisor circuit holds WE high during power-down so no spurious writes corrupt data, and a lithium cell supplies the retention rail. Designers should verify the retention voltage and standby current figures from the Samsung K6X0808C1D datasheet when sizing the battery for multi-year service life in the field.
推荐
Telecom Line Cards
The K6X0808C1D-BF70T serves 5V telecom line cards for buffers, translation tables, and per-channel status storage in legacy T1/E1 and modem equipment. The wide 4.5V-5.5V supply tolerance absorbs backplane voltage droop, and the industrial -40C to +85C range covers central-office and outdoor plant thermal requirements. Its 70 ns access time keeps pace with line-rate processing loops in classic 8-bit bus architectures, while CMOS standby current limits card power budget consumption when the SRAM is idle. Because data retention requires no refresh, line-card firmware can power-gate or back up the SRAM contents during maintenance windows. The 28-SOP surface-mount package supports high-density card layouts with automated assembly.
推荐
Test and Measurement Equipment
Bench instruments such as logic analyzers, pattern generators, and older oscilloscope acquisition modules use parallel SRAM as acquisition scratchpad memory, and the K6X0808C1D-BF70T fills this role in 5V designs. The deterministic 70 ns access time with no refresh latency makes sample-store and readout timing easy to calculate, unlike DRAM which requires refresh scheduling around capture windows. The 32K x 8 depth captures roughly 32K samples per channel at 8-bit resolution, adequate for slow-speed debug capture. CE, OE, and WE control allows hardware capture triggers to gate writes directly. For battery-backed calibration data in the same instrument, retention at reduced VCC lets a coin cell preserve settings, per the Samsung family datasheet retention specifications.
推荐
FPGA-Based Legacy System Retargeting
When redesigning obsolete boards around modern FPGAs, engineers often keep the K6X0808C1D-BF70T as the external scratchpad to preserve verified memory behavior. The FPGA emulates the legacy 8-bit bus and drives the SRAM's CE/OE/WE with margin to the 70 ns cycle time, easily met at typical FPGA I/O timing. Where 5V I/O standards are unavailable, series resistors and level translation protect the 5V SRAM inputs, or a 3.3V SRAM replaces it entirely in new layouts. Because the device is asynchronous and fully static, no memory controller IP with refresh state machines is required, reducing design risk. This makes the K6X0808C1D family a common bridge component in avionics and industrial obsolescence-management programs.
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推荐产品汇总
工程参考数据： K6X0808C1D-BF70T ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | K6X0808C1D-BF55 | K6X0808C1D-GF55000 | K6X0808C1D-BF70 |
|---|---|---|---|---|
| Package | 28-SOP | 28-SOP - same | 28-SOP - same | 28-SOP - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Organization | 32K x 8 (256 Kbit) | 32K x 8 (256 Kbit) | 32K x 8 (256 Kbit) | 32K x 8 (256 Kbit) |
| Access Time | 70 ns | 55 ns | 55 ns | 70 ns |
| Supply Voltage | 4.5 V to 5.5 V | 4.5 V to 5.5 V | 4.5 V to 5.5 V | 4.5 V to 5.5 V |
| Operating Temperature | -40C to +85C | -40C to +85C | -40C to +85C | -40C to +85C |
| Interface / Control | Parallel, CE/OE/WE | Parallel, CE/OE/WE | Parallel, CE/OE/WE | Parallel, CE/OE/WE |
关键差异点
- Balanced speed/cost point in family （对比 K6X0808C1D-BF55)
- Native 5V operation, no level shifting （对比 3.3V SRAM families (e.g., low-voltage 32Kx8 parts))
- Fully static, zero refresh overhead （对比 PSRAM/DRAM alternatives)
设计说明
Place a 0.1uF ceramic decoupling capacitor within 3 mm of the VCC (pin 28) to VSS (pin 15) pair, plus one bulk 10uF capacitor per eight SRAMs on the memory rail. The 28-SOP lead frame presents moderate lead inductance; short, wide traces on address lines reduce ringing at 70 ns edge rates. Keep the trace lengths of CE, OE, and WE matched to the address bus to avoid skew-induced bus contention during read-to-write transitions.
Estimated: standby current depends on the Samsung datasheet DC characteristics, which were not numerically provided in this page's source data - consult the datasheet table before sizing the battery for retention. For battery-backup designs, hold CE high during power-down and gate WE with a supervisor IC so that no write pulse occurs while VCC crosses the retention threshold. Do not connect this 5V part to a 3.3V rail; input thresholds assume 5V TTL drive levels.
Common failure mode: simultaneous OE and WE assertion causes I/O pins to drive, creating bus contention and possible damage. Ensure controller logic guarantees WE and OE never overlap low. A second pitfall is substituting a 3.3V 32K x 8 SRAM without checking pinout - some 28-pin SRAMs place VCC and VSS differently, so always compare against the Samsung 28-SOP drawing pin-for-pin. Finally, the -70 speed grade means 70 ns, not 7 ns; do not assume zero-wait-state operation on fast buses above roughly 14 MHz.
合规信息
RoHS compliance inferred from marketplace listing of the BF70T (Pb-free suffix convention) and green family variants (GF prefix); verify on Samsung product page. REACH and conflict-minerals status not stated in provided data.
