K9F6408U0B vs K9F2808Q0B 对比

详细并排对比 K9F6408U0B 出自 Samsung Electronics 和 K9F2808Q0B 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K9F6408U0B K9F6408U0B - 64Mbit 8M x8 NAND Flash 44-TSOP2 | Samsung

K9F6408U0B - 64Mbit 8M x8 NAND Flash 44-TSOP2 | Samsung

K9F6408U0B Obsolete
Samsung Electronics
K9F2808Q0B K9F2808Q0B - 128Mb SLC NAND Flash 1.8V 63-TBGA | Samsung

K9F2808Q0B - 128Mb SLC NAND Flash 1.8V 63-TBGA | Samsung

K9F2808Q0B ✗ 停产

规格对比

参数 K9F6408U0B K9F2808Q0B
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 Obsolete 停产
库存状态 有库存 有库存
单价(USD) $3.20 $0.00
Memory Organization 8M x 8 bit (64Mbit) —
存储器类型 NAND Flash SLC NAND Flash (parallel)
Operating Voltage (VCC) 2.7 V to 3.6 V 1.7 V to 1.95 V
Access Time / Cycle Time 50 ns —
封装 44-TSOP2 63-pin TBGA
Page Size 528 bytes (512 data + 16 spare) [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: block organization from datasheet] [DATA_NEEDED: block size]
Program/Erase Endurance 100K program/erase cycles [DATA_NEEDED: endurance cycles]
接口 8-bit multiplexed command/address/data I/O 8-bit multiplexed address/data
Write Protect Yes (WP pin) —
Ready/Busy Output Yes (R/B open-drain) —
Operating Temperature (TCB0 grade) 0C to 70C —
Operating Temperature (TIB0 grade) -40C to 85C —
安装类型 Surface Mount Surface Mount
RoHS 状态 [DATA_NEEDED: RoHS status] unknown
Production Status (per datasheet) Mass Production (legacy; now obsolete) —
Density — 128 Mbit
存储组织 — 16M x 8
Read Access Speed — 50 ns
Cell Type — SLC (1 bit/cell)
Temperature Grade — C (commercial), I (industrial)
Typical Read Current (Icc1) — [DATA_NEEDED: Icc1]
Production Status — Mass production (per legacy datasheet); now EOL/obsolete

数据手册与资源

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