K9F6408U0B vs K9F2808Q0B 비교

다음의 상세 나란히 비교: K9F6408U0B 제조: Samsung Electronics 및 K9F2808Q0B 제조: Samsung Electronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Samsung Electronics
K9F6408U0B K9F6408U0B - 64Mbit 8M x8 NAND Flash 44-TSOP2 | Samsung

K9F6408U0B - 64Mbit 8M x8 NAND Flash 44-TSOP2 | Samsung

K9F6408U0B Obsolete
Samsung Electronics
K9F2808Q0B K9F2808Q0B - 128Mb SLC NAND Flash 1.8V 63-TBGA | Samsung

K9F2808Q0B - 128Mb SLC NAND Flash 1.8V 63-TBGA | Samsung

K9F2808Q0B ✗ 단종

사양 비교

파라미터 K9F6408U0B K9F2808Q0B
브랜드 Samsung Electronics Samsung Electronics
카테고리 Memory ICs Memory ICs
수명 주기 상태 Obsolete 수명 종료
재고 상태 In Stock In Stock
단가 (USD) $3.20 $0.00
Memory Organization 8M x 8 bit (64Mbit) —
메모리 유형 NAND Flash SLC NAND Flash (parallel)
Operating Voltage (VCC) 2.7 V to 3.6 V 1.7 V to 1.95 V
Access Time / Cycle Time 50 ns —
패키지 44-TSOP2 63-pin TBGA
Page Size 528 bytes (512 data + 16 spare) [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: block organization from datasheet] [DATA_NEEDED: block size]
Program/Erase Endurance 100K program/erase cycles [DATA_NEEDED: endurance cycles]
인터페이스 8-bit multiplexed command/address/data I/O 8-bit multiplexed address/data
Write Protect Yes (WP pin) —
Ready/Busy Output Yes (R/B open-drain) —
Operating Temperature (TCB0 grade) 0C to 70C —
Operating Temperature (TIB0 grade) -40C to 85C —
실장 유형 Surface Mount Surface Mount
RoHS 상태 [DATA_NEEDED: RoHS status] unknown
Production Status (per datasheet) Mass Production (legacy; now obsolete) —
Density — 128 Mbit
메모리 구성 — 16M x 8
Read Access Speed — 50 ns
Cell Type — SLC (1 bit/cell)
Temperature Grade — C (commercial), I (industrial)
Typical Read Current (Icc1) — [DATA_NEEDED: Icc1]
Production Status — Mass production (per legacy datasheet); now EOL/obsolete

데이터시트 & 자료

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