K9F6408U0B vs K9F2808Q0B Comparison
Detailed side-by-side comparison of K9F6408U0B by Samsung Electronics and K9F2808Q0B by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K9F2808Q0B - 128Mb SLC NAND Flash 1.8V 63-TBGA | Samsung
K9F2808Q0B ✗ End of LifeSpecification Comparison
| Parameter | K9F6408U0B | K9F2808Q0B |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Obsolete | End of Life |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.20 | $0.00 |
| Memory Organization | 8M x 8 bit (64Mbit) | — |
| Memory Type | NAND Flash | SLC NAND Flash (parallel) |
| Operating Voltage (VCC) | 2.7 V to 3.6 V | 1.7 V to 1.95 V |
| Access Time / Cycle Time | 50 ns | — |
| Package | 44-TSOP2 | 63-pin TBGA |
| Page Size | 528 bytes (512 data + 16 spare) | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block organization from datasheet] | [DATA_NEEDED: block size] |
| Program/Erase Endurance | 100K program/erase cycles | [DATA_NEEDED: endurance cycles] |
| Interface | 8-bit multiplexed command/address/data I/O | 8-bit multiplexed address/data |
| Write Protect | Yes (WP pin) | — |
| Ready/Busy Output | Yes (R/B open-drain) | — |
| Operating Temperature (TCB0 grade) | 0C to 70C | — |
| Operating Temperature (TIB0 grade) | -40C to 85C | — |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | [DATA_NEEDED: RoHS status] | unknown |
| Production Status (per datasheet) | Mass Production (legacy; now obsolete) | — |
| Density | — | 128 Mbit |
| Organization | — | 16M x 8 |
| Read Access Speed | — | 50 ns |
| Cell Type | — | SLC (1 bit/cell) |
| Temperature Grade | — | C (commercial), I (industrial) |
| Typical Read Current (Icc1) | — | [DATA_NEEDED: Icc1] |
| Production Status | — | Mass production (per legacy datasheet); now EOL/obsolete |