LMG3522R030RQSR - 650V 30mΩ GaN FET with Integrated Driver | TI
料号： LMG3522R030RQSR ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $13.6 | $13.60 |
| 10 | $12.24 | $122.40 |
| 100 | $10.88 | $1,088.00 |
| 500 | $9.52 | $4,760.00 |
| 1,000 | $8.16 | $8,160.00 |
LMG3522R030RQSR 概述
GaN FETs are a class of wide-bandgap power semiconductors that offer significantly lower figure of merit (RDS(on) x Qg) compared to silicon MOSFETs, enabling higher switching frequencies and reduced switching losses. The LMG3522R030 integrates the gate driver, which simplifies layout and reduces parasitic inductance, a critical factor for high-speed switching. This integration also provides robust protection features including overcurrent protection, overtemperature protection, and temperature reporting via a digital output.
Key features include a 650-V drain-source voltage rating, 30-mΩ typical RDS(on), and a 55-A continuous current rating. The integrated driver supports both high-side and low-side switches, and the device includes an interlock function to prevent shoot-through. The VQFN-52 package offers low thermal resistance, and the exposed pad aids in heat dissipation. The device is available in both standard and automotive (Q1) grades, with the Q1 variant qualified to AEC-Q100.
Technically, the LMG3522R030 uses a GaN-on-Si process, which balances performance and cost. The integrated driver reduces external component count and minimizes gate-loop inductance, enabling faster switching transitions. The device supports a wide input voltage range and is designed for high-frequency operation, reducing magnetics size. The temperature reporting feature allows real-time monitoring, enhancing system reliability.
Typical applications include server power supplies, telecom rectifiers, solar inverters, and electric vehicle onboard chargers. The device's high efficiency and power density make it suitable for totem-pole PFC stages, where its low reverse recovery charge (Qrr) minimizes losses. In LLC converters, the integrated driver simplifies the half-bridge configuration.
When designing with this device, ensure proper PCB layout with short, low-inductance paths for the gate drive and power loops. Use a dedicated ground plane and place decoupling capacitors close to the VCC and BST pins. The thermal pad must be soldered to a copper pour for effective heat sinking.
直接替换替代料： LMG3522R030RQSR ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： LMG3522R030RQSR （相同外形与封装尺寸） ——差异在于 Drain-Source Voltage (VDS), Integrated Driver, Package.
快速对比工具——选择替代料号进行并排对比：
LMG3522R030QRQSRQ1
✅ 直接替换📋 参考替代料（不在目录中）
LMG3522R050RQSR
✅ 直接替换📋 参考替代料（不在目录中）
LMG3526R030RQSR
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
LMG3522R030QRQSTQ1
✅ 直接替换📋 参考替代料（不在目录中）
LMG3522R030RQSR 最大额定值与电气特性
| Drain-Source Voltage (VDS) | 650 V |
| RDS(on) (Typical) | 30 mΩ |
| Continuous Drain Current (ID) | 55 A |
| Integrated Driver | Yes (half-bridge) |
| Protection Features | Overcurrent, overtemperature, temperature reporting |
| 封装 | 52-VQFN (12x12 mm) Exposed Pad |
| 安装类型 | Surface Mount |
| Automotive Grade | Available (Q1 variant, AEC-Q100) |
| RoHS 状态 | Compliant |
LMG3522R030RQSR 引脚配置
| 引脚 1 | VCC — Power supply for internal driver |
| 引脚 2 | BST — Bootstrap pin for high-side driver |
| 引脚 3 | HB — High-side bridge output |
| 引脚 4 | LB — Low-side bridge output |
| 引脚 5 | GND — Ground |
| 引脚 6 | PWM — PWM input for driver |
| 引脚 7 | EN — Enable pin |
| 引脚 8 | TEMP — Temperature reporting output |
| 引脚 9 | OC — Overcurrent protection flag |
| 引脚 10 | VIN — Input voltage sense |
| 引脚 11 | PGND — Power ground |
| 引脚 12 | EP — Exposed pad for thermal dissipation |
安全工作区
典型应用
LMG3522R030RQSR 适用于 6 应用s: Totem-Pole PFC, LLC Resonant Converter, Server Power Supply, Solar Inverter, Electric Vehicle Onboard Charger, Telecom Rectifier.
Totem-Pole PFC
The LMG3522R030's 650-V rating and 30-mΩ RDS(on) enable high-efficiency totem-pole PFC stages. Its integrated driver simplifies the half-bridge configuration, and the low Qrr of GaN reduces reverse recovery losses. Operating at high frequencies (100-200 kHz) allows smaller magnetics, improving power density. The device's overcurrent protection ensures robust operation in demanding AC-DC converters.
推荐
LLC Resonant Converter
In LLC converters, the LMG3522R030's integrated half-bridge driver reduces component count and layout parasitics. Its fast switching capability (up to 1 MHz) enables high-frequency operation, shrinking transformer size. The device's temperature reporting allows real-time thermal management, enhancing reliability in server and telecom power supplies. The 55-A current rating supports high-power outputs.
推荐
Server Power Supply
The LMG3522R030 is ideal for server power supplies requiring high efficiency and power density. Its 650-V rating suits 400-V bus architectures, and the 30-mΩ RDS(on) minimizes conduction losses. The integrated driver and protection features reduce external components, saving board space. The device's high switching frequency enables compact magnetics, meeting 80+ Titanium efficiency standards.
推荐
Solar Inverter
For solar inverters, the LMG3522R030's high efficiency and reliability are critical. Its 650-V rating handles typical DC bus voltages, and the low RDS(on) reduces losses in MPPT and inverter stages. The integrated driver simplifies design, and the temperature reporting aids in thermal management. The device's robustness under hard-switching conditions makes it suitable for harsh outdoor environments.
推荐
Electric Vehicle Onboard Charger
The LMG3522R030-Q1 automotive variant is designed for onboard chargers in EVs. Its AEC-Q100 qualification ensures reliability in automotive environments. The 650-V rating supports 400-V battery systems, and the 30-mΩ RDS(on) enables high-efficiency AC-DC conversion. The integrated driver and protection features reduce BOM cost and improve system robustness.
推荐
Telecom Rectifier
In telecom rectifiers, the LMG3522R030's high efficiency reduces cooling requirements and operating costs. Its 650-V rating is suitable for 3-phase rectification, and the low RDS(on) minimizes losses. The integrated driver simplifies the half-bridge topology, and the device's high switching frequency allows compact filter components. The temperature reporting feature enables predictive maintenance.
推荐
推荐产品汇总
工程参考数据： LMG3522R030RQSR ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | LMG3522R030QRQSRQ1 | LMG3522R050RQSR | LMG3526R030RQSR |
|---|---|---|---|---|
| Package | 52-VQFN (12x12) | 52-VQFN (12x12) | 52-VQFN (12x12) | 52-VQFN (12x12) |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| VDS (V) | 650 | 650 | 650 | 650 |
| RDS(on) (mΩ) | 30 | 30 | 50 | 30 |
| Continuous Current (A) | 55 | 55 | 32 | 55 |
| Automotive Grade | No | Yes (AEC-Q100) | No | No |
| Zero Voltage Reporting | No | No | No | Yes |
关键差异点
- Lower RDS(on) than LMG3522R050 （对比 LMG3522R050RQSR)
- Automotive grade option available （对比 LMG3522R030RQSR (standard))
- Integrated driver simplifies design （对比 Discrete GaN FET + driver solution)
设计说明
For the LMG3522R030, minimize the gate drive loop inductance by placing the driver and GaN FET close together. Use a 4-layer PCB with a dedicated ground plane. Place 100-nF decoupling capacitors close to the VCC and BST pins. The exposed pad must be soldered to a large copper pour for thermal management.
The LMG3522R030 can dissipate significant power at high currents. Ensure adequate thermal vias under the exposed pad to transfer heat to the PCB. For 55-A operation, a heatsink or forced airflow may be required. Monitor the temperature reporting pin to prevent overtemperature shutdown.
Do not exceed the absolute maximum VDS of 650 V. Ensure proper dead-time control to prevent shoot-through in half-bridge configurations. The integrated driver requires a bootstrap capacitor for high-side operation; select a capacitor with low ESR and adequate voltage rating. Verify the PWM input logic levels match the driver's specifications.
合规信息
RoHS compliant per TI product page. Automotive grade available in Q1 variant.
