M29F160FT55N3E2 vs M29F160FB55N3E2 对比

详细并排对比 M29F160FT55N3E2 出自 Micron Technology 和 M29F160FB55N3E2 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29F160FT55N3E2 M29F160FT55N3E2 - 16Mbit 55ns 5V NOR Flash | Micron | TSOP-48

M29F160FT55N3E2 - 16Mbit 55ns 5V NOR Flash | Micron | TSOP-48

M29F160FT55N3E2 ✓ 量产中
Micron Technology
M29F160FB55N3E2 M29F160FB55N3E2 - 16Mbit 55ns 5V NOR Flash | Micron

M29F160FB55N3E2 - 16Mbit 55ns 5V NOR Flash | Micron

M29F160FB55N3E2 ✓ 量产中

规格对比

参数 M29F160FT55N3E2 M29F160FB55N3E2
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $2.72
存储器类型 NOR Flash NOR Flash - Parallel, Asynchronous
Memory Organization 16 Mbit (1 M x 16 / 2 M x 8) —
Density 16777 kbits 16777 kbits (16 Mbit)
Number of Words 1000 k 1000 k
Bits per Word 16 bits 16 bits
Access Time 55 ns 55 ns
电源电压 5 V —
接口 Parallel Parallel
Boot Block Top Boot Block Bottom Boot Block (FB)
工作温度 -40C to +125C -40 C to +125 C
Temperature Grade Automotive Grade 3 —
封装 48-TSOP I 48-TSOP I
安装类型 Surface Mount Surface Mount
Bus Width 8-bit / 16-bit selectable (BYTE# pin) —
Program/Erase Embedded program/erase controller (byte/word algorithms) —
Factory Erase State All bits erased to 1 —
RoHS 状态 Compliant (E suffix) ROHS3 Compliant
存储组织 — 1 M x 16 / 2 M x 8
Supply Voltage (VCC) — 5 V
Programming Algorithm — Embedded byte/word program and erase controller
Packaging — Tray
Lead Free Status — Lead Free

数据手册与资源

浏览全部产品 创建 BOM 获取报价