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Micron Technology

M29F160FT55N3E2 - 16Mbit 55ns 5V NOR Flash | Micron | TSOP-48

料号: M29F160FT55N3E2 ✓ 量产中
有现货 1-3 个工作日内发货
5 V Vdss 1000 k Rds(on) 48-TSOP I Package NOR Flash Memory
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价格更新于: 2026-09-04
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M29F160FT55N3E2 概述

The Micron M29F160FT55N3E2 is a 16 Mbit (2 Mbyte) 5 V parallel NOR Flash memory organized as 1 Mword x 16 bits (or 2 Mbyte x 8 bits in byte mode), with a 55 ns access time, housed in a 48-pin TSOP I package and rated from -40 C to +125 C (Automotive Grade 3). The T suffix denotes the top boot block architecture, and the E suffix denotes an RoHS-compliant package.

A parallel NOR Flash memory is a non-volatile semiconductor memory in which memory cells are connected in parallel, allowing random access to any address in a single access cycle. Within the memory hierarchy, NOR Flash sits alongside SRAM and DRAM as directly addressable code-storage memory, forming the backbone of power management ICs, microcontroller boot systems, and embedded processor firmware storage where execute-in-place (XIP) operation is required.

Key features include a single 5 V supply (no separate 12 V programming voltage), a 55 ns access time suitable for zero-wait-state 16-bit bus operation, and an embedded program/erase controller that automates byte/word programming and block erase algorithms. Block architecture includes boot blocks for code storage, and devices ship from the factory with all memory content bits erased to 1.

Technically, the M29F family implements a command-set based interface: command sequences written to the address/data bus trigger program or erase operations executed by the internal controller, while status polling and toggle bits report completion. The RP# (Reset/Block Temporary Unprotect) pin provides instant boot-block reprogramming capability and fast reset, and a BYTE# pin selects 8-bit or 16-bit bus width operation.

Typical applications include automotive ECU boot code storage, embedded industrial controller firmware, telecom line-card code memory, and set-top-box BIOS where 5 V tolerant parallel buses persist.

Design-wise, keep VCC decoupling close to the package and respect RP# timing at power-up to avoid temporary boot-block protection states.

This page synthesizes verified distributor listings, second-source cross-references (Alliance Memory, Spansion), and practical design notes not found in the manufacturer datasheet.

直接替换替代料: M29F160FT55N3E2 ——相同封装,引脚兼容。需要 PCB 改动的不同封装料号已排除。

本系列中的变体

可与以下型号直接替换的同系列型号: M29F160FT55N3E2 (相同外形与封装尺寸) ——差异在于 Memory Type, Density, Operating Temperature, Organization, RoHS Status.

Micron Technology
Memory Type: NOR Flash - Parallel, Asynchronous
Density: 16777 kbits (16 Mbit)
Operating Temperature: -40 C to +125 C
对比 M29F160FT55N3E2 →
Micron Technology
Memory Type: Parallel NOR Flash
Density: 16777 kbits (16 Mbit)
Operating Temperature: -40 to +125 C
对比 M29F160FT55N3E2 →
Micron Technology
Memory Type: NOR Flash (Parallel, Asynchronous)
Density: 16 Mbit (16777 kbits)
Organization: 1M x 16 / 2M x 8
对比 M29F160FT55N3E2 →

快速对比工具——选择替代料号进行并排对比:

M29F160FT55N3F2

✅ 直接替换
Micron Technology
📦 48-TSOP I
NOR Flash (Parallel, Asynchronous) · 16 Mbit (16777 kbits) · 1M x 16 / 2M x 8 · 1000 k · 16 bits · 55 ns · 5 V (operating 4.5 V) · Parallel

✓ 有现货

$4.9 / 个

查看数据手册 →

M29F160FB55N3E2

✅ 直接替换
Micron Technology
📦 48-TSOP I
NOR Flash - Parallel, Asynchronous · 16777 kbits (16 Mbit) · 1 M x 16 / 2 M x 8 · 1000 k · 16 bits · 55 ns · 5 V · Parallel

✓ 有现货

$2.72 / 个

查看数据手册 →

M29F160FB55N3F2

✅ 直接替换
Micron Technology
📦 48-TSOP I
Parallel NOR Flash · 16777 kbits (16 Mbit) · 1 Mword x 16 bits / 2 Mbyte x 8 bits · 1000 k · 16 bits · 55 ns · 5 V · Bottom Boot Block

✓ 有现货

$5.6 / 个

查看数据手册 →

M29F160FT55N3E2

✅ 直接替换
Micron Technology
📦 48-TSOP I
NOR Flash · 16 Mbit (1 M x 16 / 2 M x 8) · 16777 kbits · 1000 k · 16 bits · 55 ns · 5 V · Parallel

✓ 有现货

联系询价

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MBM29F160TE-55PFTN-E1

✅ 直接替换
📦 48-TSOP I
Spansion/Fujitsu equivalent: same 16 Mbit, 55 ns, 5 V top-boot parallel NOR in 48-TSOP I; command-set details should be verified

📋 参考替代料(不在目录中)

M29F160FT55N3E2 最大额定值与电气特性

存储器类型 NOR Flash
Memory Organization 16 Mbit (1 M x 16 / 2 M x 8)
Density 16777 kbits
Number of Words 1000 k
Bits per Word 16 bits
Access Time 55 ns
电源电压 5 V
接口 Parallel
Boot Block Top Boot Block
工作温度 -40C to +125C
Temperature Grade Automotive Grade 3
封装 48-TSOP I
安装类型 Surface Mount
Bus Width 8-bit / 16-bit selectable (BYTE# pin)
Program/Erase Embedded program/erase controller (byte/word algorithms)
Factory Erase State All bits erased to 1
RoHS 状态 Compliant (E suffix)

M29F160FT55N3E2 48-tsop i 引脚配置指南

M29F160FT55N3E2(48-tsop i 封装)的引脚配置。 该数字 IC 包含 GPIO、通信接口(UART、SPI、I2C)和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。

M29F160FT55N3E2 的 48-tsop i 封装引脚图

暂无详细引脚数据: M29F160FT55N3E2.

请参阅 数据手册 以查看完整引脚配置。

典型应用

M29F160FT55N3E2 适用于 6 应用s: Automotive ECU Boot Code Storage, Industrial Embedded Controller Firmware, Telecom Line Card Code Memory, Set-Top Box and Consumer BIOS Storage, Test and Measurement Equipment Firmware, Legacy 5V System Maintenance and Repair.

🚗

Automotive ECU Boot Code Storage

The M29F160FT55N3E2 fits automotive ECU boot-code storage because its N3 grade is rated -40 C to +125 C (Automotive Grade 3) and its 55 ns access time allows direct processor fetch from reset vectors without wait states on 5 V buses. In an ECU, the top boot block holds the reset/interrupt vector table and bootloader, protected against accidental erase by the block-protection scheme, while RP# provides instant reset during cranking transients. The embedded program/erase controller enables field firmware updates over CAN or K-Line by writing command sequences on the same 16-bit parallel bus used at runtime. Unlike serial Flash, the parallel interface adds no protocol latency, preserving deterministic boot timing critical for safety-related modules. Designers should budget program/erase endurance for the planned number of OTA or service update cycles per the datasheet block specification.

🏭

Industrial Embedded Controller Firmware

Industrial PLCs, motor drives, and instrumentation frequently retain 5 V parallel buses for maximum noise immunity, and the M29F160FT55N3E2 aligns directly: single 5 V supply, 55 ns random access, and 16 Mbit capacity for application plus bootloader firmware. The parallel XIP (execute-in-place) interface lets a 16-bit microcontroller run code directly from Flash with zero protocol overhead, and the BYTE# pin allows a shared 8-bit bus for parameter storage and a 16-bit bus for code. The embedded program/erase controller performs byte/word programming and block erase autonomously, so the host CPU only issues command sequences and polls status - no firmware-level algorithm timing needed. The -40 C to +125 C range also covers unconditioned factory-floor cabinets. Decouple VCC locally and sequence RP# after VCC stabilizes to prevent temporary boot-block protection states at power-up.

🌐

Telecom Line Card Code Memory

Telecom line cards and network backplane controllers traditionally use 5 V parallel NOR Flash for boot code, and the M29F160FT55N3E2 supplies 16 Mbit at 55 ns with byte or word organization selectable via BYTE#. Its 55 ns access time sustains zero-wait-state reads on legacy telecom ASICs and 5 V microprocessors, while the top boot block isolates the bootloader from frequently updated application images. The embedded program/erase controller permits remote field upgrades across the network: the host writes standard command sequences, polls status bits, and verifies completion without external high voltage. Wide -40 C to +125 C operation covers uncoaled outdoor plant cabinets. Designers should verify bus loading, since heavily multiplexed backplanes can extend effective access time; insert wait states if capacitive load exceeds datasheet test conditions. The 48-TSOP I footprint is also shared with Alliance Memory second sources for supply security.

📺

Set-Top Box and Consumer BIOS Storage

Legacy set-top boxes, DVD players, and consumer platforms built on 5 V buses used 16 Mbit parallel NOR Flash as BIOS/firmware storage, and the M29F160FT55N3E2 matches that role exactly: 1 M x 16 organization, 55 ns access, and a single 5 V rail shared with the rest of the board. The top boot block holds the boot vector protected from erasure, while remaining blocks store application firmware that the embedded program/erase controller updates during manufacturing or service. Execute-in-place operation from the parallel bus removes the need to shadow code into scarce RAM at boot, shortening startup time. The RoHS-compliant E-suffix package satisfies consumer environmental requirements. For new consumer designs, 3 V serial NOR is generally preferred, but this part remains the correct choice when maintaining or extending existing 5 V platforms.

🔧

Test and Measurement Equipment Firmware

Bench instruments and data-acquisition systems benefit from the M29F160FT55N3E2's deterministic 55 ns parallel access for firmware storage and its -40 C to +125 C rating for portable field instruments. The 16-bit organization halves the address-cycle count compared with 8-bit Flash when paired with 16-bit DSPs or microcontrollers, and BYTE# mode lets one device serve both a 16-bit code bus and an 8-bit calibration-data bus. In-system calibration constants can be rewritten in the field using the embedded program/erase controller without removing the device, and the RP# pin gives service technicians a guaranteed hardware reset path during firmware recovery. The top boot block keeps the instrument's monitor code immune from accidental erase during calibration-block updates. Layout should keep the 48-TSOP I address/data traces short and length-matched to preserve the 55 ns timing budget across the bus.

🖥️

Legacy 5V System Maintenance and Repair

A primary ongoing use of the M29F160FT55N3E2 is sustaining engineering for installed 5 V parallel systems: avionics spares, military ground equipment, medical service stock, and industrial retrofits where redesign to 3 V serial Flash is not economically justified. Because Micron and Alliance Memory both offer the identical MPN in 48-TSOP I, repair depots can source pin-compatible replacements without PCB modification, and the Spansion MBM29F160TE-55PFTN-E1 provides a further qualified second source. The embedded program/erase controller supports bench programmers and in-circuit update jigs alike, and factory-erased (all-1) shipping state means devices can be programmed immediately upon receipt. When servicing mixed fleets, note that FT (top boot) and FB (bottom boot) variants are electrically identical but not code-compatible - always match boot block location to the original board design.

What is the M29F160FT55N3E2 memory size and organization?
The M29F160FT55N3E2 is a 16 Mbit parallel NOR Flash memory organized as 1 Mword x 16 bits (or 2 Mbyte x 8 bits when BYTE# selects byte mode). According to the Micron product page and datasheet summaries, it delivers a 55 ns access time from a single 5 V supply, with the top boot block architecture indicated by the T suffix in the part number.
What is the access time of M29F160FT55N3E2?
The access time is 55 ns. According to the Micron datasheet summary on chipdig.com, the 55 in the part number denotes the device speed grade, which supports zero-wait-state reads on many 5 V 16-bit embedded processors. This is the Auto Grade 55 ns speed option in conjunction with the Grade 3 (-40 C to +125 C) temperature rating.
What does the M29F160FT55N3E2 part number mean?
Each field in M29F160FT55N3E2 has a defined meaning. According to the Micron datasheet decoding: M29F160 = 16 Mbit device; T = top boot block (B would be bottom boot); 55 = 55 ns access time; N3 = TSOP package with Automotive Grade 3 rating to +125 C; E = RoHS-compliant package; the trailing 2 denotes packing/temp code per the ordering scheme.
Is M29F160FT55N3E2 suitable for automotive applications?
Yes. The N3E2 grade is rated from -40 C to +125 C, which the Micron datasheet identifies as Auto Grade 3, intended for automotive environments such as ECU boot-code storage. Designers targeting harsh under-hood zones should verify their specific thermal requirements, since some automotive platforms require higher grades; the same M29F family offers the necessary temperature options.
What is the difference between M29F160FT55N3E2 and M29F160FB55N3E2?
The only difference is boot block location: the FT version places the protected boot blocks at the top of the memory array, while the FB version places them at the bottom. Both are 16 Mbit, 55 ns, 5 V, 48-TSOP I, -40 C to +125 C parts with identical pinouts, making them drop-in interchangeable depending on whether your processor reset vector maps to the top or bottom of the address space.
M29F160FT55N3E2 vs MBM29F160TE-55PFTN-E1 - which should I choose?
Both are 16 Mbit, 5 V, 55 ns top-boot parallel NOR Flash in 48-TSOP I. The Micron M29F160FT55N3E2 is the current Micron-branded part (also second-sourced by Alliance Memory), while the MBM29F160TE-55PFTN-E1 is the Spansion/Fujitsu equivalent listed in Findchips comparisons. Choose the Micron part for continued Micron/Alliance supply; the Spansion part serves legacy designs already qualified on the Fujitsu command set. Verify command-set compatibility before switching.
Can M29F160FT55N3E2 replace M29F160FT55N3F2?
Yes, in most designs. The E2 and F2 suffixes denote different temperature/packing grade combinations in the M29F ordering scheme; both share the 16 Mbit density, 55 ns speed, 5 V supply, top boot block, and 48-TSOP I package with identical pinout. Confirm your required operating temperature ceiling and packing format against the datasheet ordering table before substitution, as the grade codes differ.
What is the best drop-in replacement for M29F160FT55N3E2?
The best drop-in replacement is the same MPN manufactured by Alliance Memory, Inc., which lists an identical M29F160FT55N3E2 (16 Mbit, 55 ns, 48-TSOP I) on DigiKey and Mouser as a direct second source. For bottom-boot layouts, the Micron M29F160FB55N3E2 is pin-to-pin compatible with the only difference being boot block placement. Both preserve the same PCB footprint.
Is there a cross-brand equivalent for M29F160FT55N3E2?
Yes. The Spansion (formerly Fujitsu) MBM29F160TE-55PFTN-E1 is the recognized cross-brand equivalent: 16 Mbit parallel NOR Flash, 55 ns, 5 V, top boot block, 48-TSOP I package, as shown in the Findchips part comparison. It is pin-compatible on the same footprint, though engineers should confirm command-set timing details against both datasheets during qualification.
Where to buy M29F160FT55N3E2 online?
The M29F160FT55N3E2 is listed on DigiKey under both Micron Technology and Alliance Memory, Inc. (listed as in stock and shipping same day per the DigiKey listings), and on Mouser under both Micron and Alliance Memory. XAIPART also supports this MPN via quote/order-on-request. Compare quantity pricing across distributors before ordering, as stock levels change daily.
What is the price of M29F160FT55N3E2?
Verified unit pricing for the M29F160FT55N3E2 was not available in the data captured as of 2026-09-05, so this page does not state a price rather than risk an inaccurate figure. Octopart lists the part with pricing from 2 distributors; check DigiKey, Mouser, or Octopart for live quantity pricing, or request a quote from XAIPART for volume orders.
Is M29F160FT55N3E2 in stock and what is the lead time?
According to the DigiKey listings retrieved 2026-09-05, M29F160FT55N3E2 from both Micron Technology and Alliance Memory shows buy-now, ships-today availability, indicating in-stock status at the time of retrieval. Lead times for in-stock distributor inventory are typically a few business days; for volume production orders, request quotes as factory lead times may differ.
Where to download the M29F160FT55N3E2 datasheet PDF?
The official datasheet is available from the Micron product page at micron.com under the M29F160FT55N3E2 part detail, which links downloadable datasheets for the M29F parallel NOR family. Third-party mirrors such as Octopart, Datasheets.com, and DatasheetQ also host the PDF, but always prefer the Micron-hosted document to ensure you have the latest revision.
Where can I find the M29F160FT55N3E2 pinout?
The complete 48-pin TSOP I pinout (address lines A0-A19, data lines DQ0-DQ15, CE#, OE#, WE#, RP#, BYTE#, and power pins) is defined in the Micron M29F family datasheet downloadable from the Micron product page for this MPN. Because pin numbering must match the datasheet exactly, this page defers to the manufacturer document rather than reproducing it from an unverified source.
What are the key specifications of M29F160FT55N3E2 that engineers should know?
Key specifications: 16 Mbit (1 M x 16 / 2 M x 8) parallel NOR Flash; 55 ns access time; single 5 V supply with embedded program/erase controller; top boot block architecture; 48-TSOP I surface-mount package; -40 C to +125 C automotive-grade operating range; RoHS-compliant (E suffix); RP# reset/block temporary unprotect; BYTE# 8/16-bit bus selection; factory-shipped erased to 1. These figures come from the Micron datasheet and verified distributor listings.
Does M29F160FT55N3E2 require a 12 V programming voltage?
No. The M29F family operates from a single 5 V supply for both read and program/erase operations. According to the Micron datasheet summary, an embedded program/erase controller executes byte/word programming and block-erase algorithms internally, eliminating the separate 12 V VPP supply required by older generation Flash devices and simplifying in-system programming designs.

工程参考数据: M29F160FT55N3E2 ——对比、设计指导和合规信息。

选型指南

Choose the M29F160FT55N3E2 when you need a 16 Mbit, 5 V, 55 ns parallel NOR Flash with top boot blocks and automotive -40 C to +125 C operation - typically ECU boot code, 5 V industrial controllers, telecom line cards, or legacy-platform maintenance. Choose M29F160FB55N3E2 only if your processor's reset vector is at the bottom of the address space; it is otherwise identical and pin-compatible. Choose M29F160FT55N3F2 if your temperature/packing requirement matches the F2 grade code rather than E2. Source from Alliance Memory (same MPN) when Micron-branded stock is constrained - the parts share the same datasheet specification. Consider the Spansion MBM29F160TE-55PFTN-E1 only for designs already qualified on the Fujitsu/Spansion command set. For new 3 V designs, step to the M29W or SPI NOR families instead; the 5 V parallel interface is the reason to select this part, not a limitation to design around.

与替代料对比

参数 本产品 M29F160FT55N3F2 M29F160FB55N3E2 M29F160FT55N3E2 (Alliance Memory) MBM29F160TE-55PFTN-E1
Package 48-TSOP I 48-TSOP I - same 48-TSOP I - same 48-TSOP I - same 48-TSOP I - same
Brand Micron Technology Micron Technology Micron Technology Alliance Memory Spansion
Density 16 Mbit 16 Mbit 16 Mbit 16 Mbit 16 Mbit
Access Time 55 ns 55 ns 55 ns 55 ns 55 ns
Supply Voltage 5 V 5 V 5 V 5 V 5 V
Boot Block Location Top boot Top boot Bottom boot Top boot Top boot
Bus Organization 1 M x 16 / 2 M x 8 (BYTE# selectable) 1 M x 16 / 2 M x 8 1 M x 16 / 2 M x 8 1 M x 16 x16 / x8

关键差异点

  • Top boot block architecture for high reset vectors (对比 M29F160FB55N3E2)
  • Dual-second-source availability (对比 MBM29F160TE-55PFTN-E1)
  • Automotive Grade 3 temperature rating (对比 M29F160FT55N3F2)

设计说明

Decouple VCC with 0.1 uF ceramic capacitors placed within a few millimeters of the 48-TSOP I supply pins, supplemented by a bulk 10 uF capacitor per device. Program and erase operations draw transient currents on the 5 V rail; inadequate decoupling causes VCC droop that can corrupt programming or reset the internal state machine. Keep the address and data bus traces as short and matched as practical, since the 55 ns access time budget leaves little margin for excessive trace loading or stub reflections on heavily multiplexed buses.

Manage the RP# (Reset/Block Temporary Unprotect) pin carefully at power-up. RP# must be held low until VCC is stable, then driven high, to guarantee a clean boot state; pulling RP# high too early can leave the boot block in a temporary protection state or the device in reset. Confirm the drive source can meet the datasheet RP# rise-time requirement, and avoid leaving RP# floating - tie it to a controlled supervisor output rather than directly to VCC in noisy environments.

Match boot block location to the processor reset vector: FT (top boot) and FB (bottom boot) variants are pin-identical but store the vector table at opposite ends of the array, so swapping them silently breaks boot. Also verify the command-set sequence in your programmer against the specific datasheet revision when mixing Micron/Alliance and Spansion sources, and confirm the E2 versus F2 grade code against your required temperature ceiling before purchasing. Devices ship erased to all 1s, so blank-check is expected to pass on receipt.

合规信息

RoHS
Compliant
REACH
Unknown
AEC-Q100
Unknown
无铅
Yes
无卤
Unknown
冲突矿物
Unknown

RoHS compliance indicated by the E suffix in the part number per the Micron ordering information. Automotive Grade 3 temperature rating (-40 C to +125 C) is stated in the datasheet ordering decode; formal AEC-Q100 qualification status was not found in the provided data.

数据核验日期: 2026-09-05 ——数据由 XAIPART 元器件工程团队核验和整理

相关搜索

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相关元器件 & 术语

Micron Technology Alliance Memory M29F160FT55N3E2 M29F160FB55N3E2 MBM29F160TE-55PFTN-E1 NOR Flash parallel NOR Flash memory Flash memory non-volatile memory 48-TSOP I TSOP package surface mount RoHS Automotive Grade 3 top boot block execute-in-place embedded program/erase controller access time RP# reset pin BYTE# bus width selection automotive ECU telecom line card
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