M29F160FT55N3F2 vs M29F160FB55N3E2 对比

详细并排对比 M29F160FT55N3F2 出自 Micron Technology 和 M29F160FB55N3E2 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29F160FT55N3F2 M29F160FT55N3F2 - 16Mbit 5V 55ns NOR Flash | Micron Technology

M29F160FT55N3F2 - 16Mbit 5V 55ns NOR Flash | Micron Technology

M29F160FT55N3F2 ✓ 量产中
Micron Technology
M29F160FB55N3E2 M29F160FB55N3E2 - 16Mbit 55ns 5V NOR Flash | Micron

M29F160FB55N3E2 - 16Mbit 55ns 5V NOR Flash | Micron

M29F160FB55N3E2 ✓ 量产中

规格对比

参数 M29F160FT55N3F2 M29F160FB55N3E2
品牌 Micron Technology Micron Technology
分类 Flash Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $4.90 $2.72
存储器类型 NOR Flash (Parallel, Asynchronous) NOR Flash - Parallel, Asynchronous
Density 16 Mbit (16777 kbits) 16777 kbits (16 Mbit)
存储组织 1M x 16 / 2M x 8 1 M x 16 / 2 M x 8
Number of Words 1000 k 1000 k
Bits per Word 16 bits 16 bits
Access Time 55 ns 55 ns
Supply Voltage (VCC) 5 V (operating 4.5 V) 5 V
接口 Parallel Parallel
Synchronous / Asynchronous Asynchronous —
Boot Block Location Top boot block (FT) —
工作温度 -40C to +125C -40 C to +125 C
封装 48-Pin TSOP 48-TSOP I
安装类型 Surface Mount Surface Mount
Packaging Tape & Reel Tray
Program / Erase Embedded byte/word program algorithms (controller on-chip) —
RoHS 状态 [DATA_NEEDED: RoHS status] ROHS3 Compliant
MSL 等级 [DATA_NEEDED: moisture sensitivity level] —
Boot Block — Bottom Boot Block (FB)
Programming Algorithm — Embedded byte/word program and erase controller
Lead Free Status — Lead Free

数据手册与资源

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