M29F200FT55N3E2 vs M29F200FB55N3E2 对比

详细并排对比 M29F200FT55N3E2 出自 Micron Technology 和 M29F200FB55N3E2 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29F200FT55N3E2 M29F200FT55N3E2 - 2Mbit 5V NOR Flash 55ns TSOP-48 | Micron

M29F200FT55N3E2 - 2Mbit 5V NOR Flash 55ns TSOP-48 | Micron

M29F200FT55N3E2 ✓ 量产中
Micron Technology
M29F200FB55N3E2 M29F200FB55N3E2 - 2Mbit 5V NOR Flash 55ns TSOP-48 | Micron

M29F200FB55N3E2 - 2Mbit 5V NOR Flash 55ns TSOP-48 | Micron

M29F200FB55N3E2 ✗ 停产

规格对比

参数 M29F200FT55N3E2 M29F200FB55N3E2
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 停产
库存状态 有库存 有库存
单价(USD) $0.00 $4.45
存储器类型 NOR Flash NOR Flash, Parallel
Memory Organization 256K x 8 / 128K x 16 —
Density 2 Mbit (2097 kbits) 2 Mbit (2097 kbits)
接口 Parallel Parallel, 8/16-bit selectable
Access Time 55 ns 55 ns
电源电压 5 V —
Number of Words 128 k 128 K
Bits per Word 16 bits 16 bits
Boot Block Top boot block —
Program / Erase Embedded program/erase controller —
工作温度 -40C to +125C -40C to +125C
封装 48-TSOP I —
安装类型 Surface Mount Surface Mount
Packaging Tray Tray
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Bus Mode Byte (x8) / Word (x16) selectable —
存储组织 — 256K x 8 / 128K x 16
Supply Voltage (VCC) — 5 V
Boot Block Architecture — Bottom Boot Block
Program/Erase Controller — Embedded byte/word program algorithms
Package Type — 48-pin TSOP I
Memory Cell Type — SLC NOR

数据手册与资源

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