M29F800FB55N3E2 vs M29F800FT55N3E2 对比
详细并排对比 M29F800FB55N3E2 出自 Micron Technology 和 M29F800FT55N3E2 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | M29F800FB55N3E2 | M29F800FT55N3E2 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | EEPROM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.83 | $4.98 |
| 存储容量 | 8 Mbit (1 M x 8 / 512 K x 16) | — |
| 存储器类型 | NOR Flash, SLC, Parallel | NOR Flash |
| Access Time | 55 ns | 55 ns |
| Supply Voltage Min | 4.5 V | — |
| Supply Voltage Max | 5.5 V | — |
| 接口 | Parallel | Parallel |
| 存储组织 | Bottom boot (B suffix) | — |
| 数据总线宽度 | 8-bit or 16-bit (BYTE# selectable) | — |
| 封装 | 48-pin TSOP Type I (N suffix) | 48-TSOP I |
| 安装类型 | Surface Mount (SMD/SMT) | Surface Mount |
| 工作温度 | Up to +125 C (Auto Grade 3 suffix) | -40C to +125C |
| Packing | Tray (blank suffix) | — |
| RoHS 状态 | Compliant (E suffix) | Compliant (E suffix = lead-free/RoHS) |
| Programming Operations | READ, ERASE, PROGRAM via command set | — |
| Write Protection | Block protection with lockable boot block | — |
| Status Output | RB# (Ready/Busy) | — |
| Memory Organization | — | 512K x 16 (8 Mbit) |
| Density | — | 8389 kbits |
| 电源电压 | — | 5 V |
| Boot Block Architecture | — | Top Boot Block |
| Word/Byte Configuration | — | BYTE# pin selectable (16-bit / 8-bit) |
| Hardware Reset / Power-Down | — | RP# pin |
| Embedded Program/Erase Controller | — | Yes (byte/word program, block erase) |
| Program/Erase Endurance | — | 100,000 cycles per block (typical for family) |
| Data Retention | — | >20 years (typical for family) |
| Ready/Busy Output | — | Yes |