M29W160EB70N3F vs M29W160EB70N3E 对比

详细并排对比 M29W160EB70N3F 出自 Micron Technology 和 M29W160EB70N3E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29W160EB70N3F M29W160EB70N3F - 16Mbit NOR Flash, 70ns, 48-TSOP | Micron

M29W160EB70N3F - 16Mbit NOR Flash, 70ns, 48-TSOP | Micron

M29W160EB70N3F ✓ 量产中
Micron Technology
M29W160EB70N3E M29W160EB70N3E - 16Mbit NOR Flash 70ns 48-TSOP | Micron

M29W160EB70N3E - 16Mbit NOR Flash 70ns 48-TSOP | Micron

M29W160EB70N3E ✓ 量产中

规格对比

参数 M29W160EB70N3F M29W160EB70N3E
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.01 $1.76
存储器类型 FLASH - NOR FLASH - NOR
存储容量 16 Mbit (2M x8 / 1M x16) 16 Mbit (2M x8, 1M x16)
Access Time 70 ns 70 ns
接口 Parallel (Byte/Word-wide) Parallel
Supply Voltage (VCC) 2.7 V to 3.6 V 2.7 V to 3.6 V
Programming Time 10 us per byte/word (typical) 10 us (typical)
Boot Block Position Bottom boot block —
Bus Configuration x8 / x16 selectable (BYTE# pin) —
封装 / 外壳 48-TSOP (0.724 in, 18.40 mm width) 48-TFSOP (0.724 in, 18.40 mm width)
安装类型 Surface Mount Surface Mount
Packaging Tape & Reel Tray
Qualification Automotive, AEC-Q100 —
Erase Architecture Block erase (boot block + main blocks) —
Common Flash Interface Yes (CFI compliant) —
Reset Input RESET# hardware reset pin —
工作温度 [DATA_NEEDED: operating temperature range] -40C to +125C
MSL 等级 [DATA_NEEDED: moisture sensitivity level] [DATA_NEEDED: moisture sensitivity level]
存储组织 — 2M x8 / 1M x16
Cell Type — SLC NOR
Speed Grade — -70
FBGA Code — N/A (TSOP package)
RoHS 状态 — [DATA_NEEDED: RoHS status]

数据手册与资源

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