M29W160ET70N3E vs M29DW323DB70N3E 对比

详细并排对比 M29W160ET70N3E 出自 Micron Technology 和 M29DW323DB70N3E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29W160ET70N3E M29W160ET70N3E - 16Mb 3V Parallel NOR Flash 70ns TSOP48 | Micron

M29W160ET70N3E - 16Mb 3V Parallel NOR Flash 70ns TSOP48 | Micron

M29W160ET70N3E ✓ 量产中
Micron Technology
M29DW323DB70N3E M29DW323DB70N3E - 32Mb NOR Flash 70ns 48-TSOP | Micron

M29DW323DB70N3E - 32Mb NOR Flash 70ns 48-TSOP | Micron

M29DW323DB70N3E ✓ 量产中

规格对比

参数 M29W160ET70N3E M29DW323DB70N3E
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $4.50 $2.55
存储器类型 NOR Flash (Parallel) Flash - NOR
存储容量 16 Mbit —
存储组织 2M x 8 / 1M x 16 —
Access Time 70 ns 70 ns
接口 Parallel Parallel
电源电压 3 V / 3.3 V (nominal) 3 V class (per manufacturer datasheet)
Boot Block Location Top boot Bottom (DB variant)
封装 48-TSOP 48-TSOP I
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q100 qualified —
工作温度 [DATA_NEEDED: operating temperature range] -40C to +125C
Bus Width Selection BYTE# pin, x8 or x16 —
Sector Protection Hardware boot block protection —
Programming Type Automatic program and erase —
Packing Tray (RoHS-compliant package, standard packing) —
RoHS 状态 Compliant (E suffix) [DATA_NEEDED: RoHS status]
Endurance [DATA_NEEDED: program/erase cycles] —
Data Retention [DATA_NEEDED: data retention] —
Memory Format — FLASH
Technology — FLASH - NOR Memory IC
Density — 32 Mb (4M x 8, 2M x 16)
Memory Organization — 4M x 8 / 2M x 16
Byte/Word Organization Select — Yes (BYTE pin)
Applications Domain — Embedded code storage / XIP
Standard Pack Quantity — [DATA_NEEDED: standard pack quantity]

数据手册与资源

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