MT40A1G16KNR-075-IT-E vs K4A8G165WB-BCRC 对比
详细并排对比 MT40A1G16KNR-075-IT-E 出自 Micron Technology 和 K4A8G165WB-BCRC 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT40A1G16KNR-075-IT-E - 16Gb DDR4-2666 1Gx16 SDRAM | Micron
MT40A1G16KNR-075-IT-E Obsolete
规格对比
| 参数 | MT40A1G16KNR-075-IT-E | K4A8G165WB-BCRC |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | Obsolete | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $55.80 | $12.57 |
| 存储器类型 | DDR4 SDRAM (Volatile) | DDR4 SDRAM (DRAM, volatile) |
| Density | 16 Gbit (2 GB) | — |
| 存储组织 | 1G × 16 | — |
| Speed Grade | -075 (DDR4-2666, 2666 MT/s) | — |
| 最大时钟频率 | 1.33 GHz | — |
| CAS Latency Timing | 19 ns (CL19) | — |
| Supply Voltage VDD | 1.2 V nominal (1.14 V–1.26 V) | — |
| Supply Voltage VDDQ | 1.2 V | — |
| Word VPP | 2.5 V | — |
| 工作温度 | 0 °C to +95 °C (Industrial) | -40C to +95C |
| 封装 | 96-ball FBGA (7.5 mm × 13.5 mm × 1.1 mm) | 96-ball FBGA (PBGA96) |
| 安装类型 | Surface Mount | Surface Mount |
| Memory Architecture | Dual-Die Package (DDP) | — |
| JEDEC Standard | JESD79-4 (DDR4) | — |
| RoHS 状态 | Compliant | Compliant |
| 存储容量 | — | 8 Gb (1 GB) |
| Memory Organization | — | 512M x 16 |
| 数据速率 | — | 2400 Mbps (PC4-19200) |
| 电源电压 | — | 1.2 V (1.14 V to 1.26 V) |
| Technology | — | CMOS DRAM, Samsung 8Gb B-die |
| Ball Pitch | — | 0.8 mm |
| 接口 | — | DDR4 (Double Data Rate, synchronous) |
| On-Die Termination | — | Yes (ODT with dynamic ODT) |
| ZQ Calibration | — | Yes |
| CRC / CA Parity | — | Yes (CRC function) |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Refresh | — | Auto-refresh and self-refresh |