MT40A1G16KNR-075-IT-E - 16Gb DDR4-2666 1Gx16 SDRAM | Micron
料号： MT40A1G16KNR-075-IT-E ✗ 停产| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $81.28 | $81.28 |
| 10 | $76.5 | $765.00 |
| 100 | $68.2 | $6,820.00 |
| 500 | $62.4 | $31,200.00 |
| 1,000 | $55.8 | $55,800.00 |
MT40A1G16KNR-075-IT-E 概述
A DDR4 SDRAM is a synchronous dynamic random-access memory that quadruples the data rate of DDR3 by transferring data on both clock edges and using a pseudo-open-drain SSTL_12 I/O standard with on-die termination. As a member of the broader DRAM family, DDR4 SDRAM occupies the mainstream volatile main-memory segment used in servers, workstations, embedded computing platforms, and high-end networking gear, sitting between the LPDDR/low-power DRAM family (mobile) and HBM (high-bandwidth, high-end accelerators) in the JEDEC memory taxonomy.
Key features include a 1.07 GHz / 1.33 GHz maximum clock frequency per Micron product pages, 19 ns CAS latency timing budget, on-die temperature sensor with automatic self-refresh, ZQ calibration for output-driver impedance trimming, and a programmable MR (mode-register) interface that supports fine-grained timing, refresh, and voltage tuning. The IT industrial temperature grade spans 0 °C to +95 °C (this is the E-grade base temperature; see validation for the IT industrial note), and the device is JEDEC JESD79-4 DDR4 compliant.
Architecturally, the die uses Micron's 20 nm-class DRAM process and integrates 8 internal banks with bank-grouping for improved throughput. The 16-bit data interface and ×16 organization make the part well suited for high-bandwidth applications where parallel channels are limited, such as AI accelerator boot memory and FPGA-attached DRAM buffers.
Typical applications include AI server boot memory, BMC/management-controller DRAM, storage-controller cache (SAS/NVMe RAID HBAs), embedded computing modules, FPGA SoC attached memory, and service-spare DDR4 inventory for hyperscaler maintenance.
When designing with this part, observe the PCB routing rules in Micron's TN-40-series application notes: maintain 90 Ω differential impedance on the DQ/DQS pairs, length-match the byte lane within ±25 ps, and provide a clean 2.5 V VPP rail with at least 10 µF of decoupling near each device.
This page synthesizes distributor pricing, drop-in same-package and cross-brand alternatives, and PCB design guidance not found in the manufacturer datasheet alone.
直接替换替代料： MT40A1G16KNR-075-IT-E ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： MT40A1G16KNR-075-IT-E （相同外形与封装尺寸） ——差异在于 Memory Type, Operating Temperature, Package.
快速对比工具——选择替代料号进行并排对比：
MT40A1G16KNR-075-E
✅ 直接替换📋 参考替代料（不在目录中）
MT40A1G16KNR-062E:E
✅ 直接替换📋 参考替代料（不在目录中）
MT40A1G16KNR-075:E TR
✅ 直接替换📋 参考替代料（不在目录中）
MT40A1G16HNR-075E
✅ 直接替换📋 参考替代料（不在目录中）
MT40A1G8WE-075E IT:B
✅ 直接替换📋 参考替代料（不在目录中）
K4A8G165WB-BCRC
✅ 直接替换✓ 有现货
$12.57 / 个
查看数据手册 →H5AN8G6NCJ-XNC
✅ 直接替换📋 参考替代料（不在目录中）
MT40A1G16KNR-075-IT-E 最大额定值与电气特性
| 存储器类型 | DDR4 SDRAM (Volatile) |
| Density | 16 Gbit (2 GB) |
| 存储组织 | 1G × 16 |
| Speed Grade | -075 (DDR4-2666, 2666 MT/s) |
| 最大时钟频率 | 1.33 GHz |
| CAS Latency Timing | 19 ns (CL19) |
| Supply Voltage VDD | 1.2 V nominal (1.14 V–1.26 V) |
| Supply Voltage VDDQ | 1.2 V |
| Word VPP | 2.5 V |
| 工作温度 | 0 °C to +95 °C (Industrial) |
| 封装 | 96-ball FBGA (7.5 mm × 13.5 mm × 1.1 mm) |
| 安装类型 | Surface Mount |
| Memory Architecture | Dual-Die Package (DDP) |
| JEDEC Standard | JESD79-4 (DDR4) |
| RoHS 状态 | Compliant |
MT40A1G16KNR-075-IT-E 96-ball fbga (7.5 mm × 13.5 mm × 1.1 mm) 引脚配置指南
MT40A1G16KNR-075-IT-E（96-ball fbga (7.5 mm × 13.5 mm × 1.1 mm) 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： MT40A1G16KNR-075-IT-E.
请参阅 数据手册 以查看完整引脚配置。
典型应用
MT40A1G16KNR-075-IT-E 适用于 6 应用s: AI Server Boot Memory, BMC and Management-Controller DRAM, Storage-Controller Cache Memory, FPGA-Attached DRAM Buffer, Embedded Computing Modules, Service-Spare DDR4 Inventory for Hyperscalers.
AI Server Boot Memory
The MT40A1G16KNR-075-IT-E fits AI server boot-memory designs because its 16-Gbit × 16 DDR4-2666 interface delivers 2666 MT/s per pin with a 19 ns CAS-latency budget, which is sufficient to load firmware images for BMC and management CPUs at sub-second boot times. The 1.2 V VDDQ plus 2.5 V VPP supply rails are standard for any server motherboard already designed to JEDEC JESD79-4 DDR4 specifications, so the part can be placed on the same voltage rails as the main DIMMs. Compared with higher-density LPDDR4 parts, DDR4 boot memory remains compatible with the wider legacy of x86 server BMCs that lack LPDDR4 PHY support. The 96-FBGA 7.5 mm × 13.5 mm footprint is also small enough to fit next to an SoC without expanding the keep-out zone.
推荐
BMC and Management-Controller DRAM
The MT40A1G16KNR-075-IT-E is well suited to baseboard management controller (BMC) DRAM because its 16-Gbit × 16 density provides ample headroom for IPMI message queues, sensor logs, and firmware scratch memory without crowding the BMC SoC. The industrial 0 °C to +95 °C temperature grade ensures operation across typical server chassis intake temperatures. The 1.2 V VDDQ rail aligns with the AST2500/AST2600-class BMC reference designs, allowing designers to reuse their existing DDR4 power tree. The 96-FBGA footprint supports tight routing to the BMC's ×16 memory controller, keeping the SI budget compliant with Micron TN-40-series routing guidelines.
推荐
Storage-Controller Cache Memory
The MT40A1G16KNR-075-IT-E delivers 16 Gbit of DDR4-2666 in a ×16 channel, which doubles the read-cache capacity available to a typical SAS/NVMe RAID HBA without increasing the number of ranks on the board. Its 1.33 GHz maximum frequency keeps the controller's DMA engine well-fed for flash-cache lookups at the 8 GT/s PCIe Gen4 line rates that dominate the storage market. The 96-FBGA package offers a small, well-shielded footprint that fits beside a PCIe-switch ASIC without violating its keep-out area. The 1.2 V/2.5 V supply pairing matches standard HBA voltage regulators, eliminating the need for additional power-rail sequencing.
推荐
FPGA-Attached DRAM Buffer
The MT40A1G16KNR-075-IT-E serves FPGA-attached DRAM buffer roles in which an external memory controller on a Xilinx or Altera FPGA needs a single 16-Gbit × 16 channel to hold large packet buffers or signal-processing windows. The DDR4-2666 bandwidth of 21.3 GB/s per channel is sufficient for 100 GbE MAC-to-FPGA pipelines and for RF digital-down-converter sample storage. The 96-FBGA ball grid simplifies PCB routing to the FPGA's ×16 memory controller banks, and the 1.2 V VDDQ rail can be supplied directly from the FPGA's on-board DDR4 regulator. The industrial 0 °C to +95 °C range supports outdoor or industrial enclosure deployments.
推荐
Embedded Computing Modules
The MT40A1G16KNR-075-IT-E is well suited to embedded computing modules that need a moderate amount of high-bandwidth DDR4 in a small footprint, such as COM-HPC or SMARC modules. Its 16-Gbit × 16 density gives 2 GB of working memory in a single chip, leaving room for a second chip for ECC support if required. The 96-FBGA 7.5 mm × 13.5 mm footprint is small enough to fit on a credit-card-sized module carrier alongside the SoC. Industrial 0 °C to +95 °C support covers the operating range of most industrial PC enclosures without derating.
推荐
Service-Spare DDR4 Inventory for Hyperscalers
The MT40A1G16KNR-075-IT-E is a prime candidate for service-spare inventory at hyperscaler data centers because it provides an exact controlled line item for field-replaceable boot DRAM and BMC caches. Its dual-die-package stack makes it functionally identical to two 8-Gbit ranks from the same Micron die family, simplifying multi-source qualification strategies. The 96-FBGA footprint is shared with several Micron 16-Gbit × 16 SKUs, allowing maintenance technicians to handle a single BOM with multiple valid part numbers. Because the part is currently flagged obsolete on Micron's catalog, the IT-E variant remains a preferred SKU for service continuity through end-of-life support windows.
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推荐产品汇总
工程参考数据： MT40A1G16KNR-075-IT-E ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MT40A1G16KNR-075-E | MT40A1G16KNR-062E:E | MT40A1G16HNR-075E | MT40A1G8WE-075E IT:B | K4A8G165WB-BCRC | H5AN8G6NCJ-XNC |
|---|---|---|---|---|---|---|---|
| Package | 96-FBGA (7.5x13.5) | 96-FBGA (7.5x13.5) - same | 96-FBGA (7.5x13.5) - same | 96-FBGA (7.5x13.5) - same | 96-FBGA (7.5x13.5) - same | 96-FBGA - same | 96-FBGA - same |
| Brand | Micron Technology | Micron Technology - same | Micron Technology - same | Micron Technology - same | Micron Technology - same | Samsung Electronics - cross-brand | SK Hynix - cross-brand |
| Density | 16 Gbit (2 GB) | 16 Gbit | 16 Gbit | 16 Gbit | 8 Gbit (half density) | 16 Gbit | 16 Gbit |
| Organization | 1G × 16 | 1G × 16 | 1G × 16 | 1G × 16 | 1G × 8 (×16 mode-configurable) | 1G × 16 | 1G × 16 |
| Speed Grade | -075 (DDR4-2666) | -075 (DDR4-2666) | -062 (DDR4-2400, slower) | -075 (DDR4-2666) | -075 (DDR4-2666) | DDR4-2666 | DDR4-2666 |
| VDD/VDDQ Supply | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0 °C to +95 °C (Industrial IT) | 0 °C to +85 °C (Commercial) | 0 °C to +95 °C | 0 °C to +95 °C | -40 °C to +95 °C (IT:B) | 0 °C to +95 °C | 0 °C to +95 °C |
| Lifecycle Status | Obsolete (per Micron catalog) | Obsolete | Active / NRND | Active | Active | Active (Samsung) | Active (SK Hynix) |
关键差异点
- Industrial temperature grade with identical speed bin （对比 MT40A1G16KNR-075-E)
- Faster -075 speed bin versus slower -062 bin （对比 MT40A1G16KNR-062E:E)
- Higher density per chip than half-density Micron part （对比 MT40A1G8WE-075E IT:B)
设计说明
PCB layout for DDR4 × 16 requires 90 Ω differential impedance on every DQ/DQS pair, with each byte lane length-matched to within ±25 ps according to Micron TN-40-series application notes. Place a minimum of one 10 µF X7R decoupling capacitor per device on the VPP 2.5 V rail, located within 5 mm of the BGA. Route VDD and VDDQ with at least 4 vias per supply pin pair to suppress AC impedance peaks.
Estimated: at 1.26 V VDDQ, 312 mA typical current, and 2666 MT/s data rate, the device dissipates roughly 0.39 W. With 96-FBGA package theta_JA of approximately 30 °C/W, junction temperature rise is about 11.7 °C above ambient - no inline heatsink required. Designers should still leave 4-6 thermal vias under the package center ball array to conduct heat into an inner ground plane for derated operating conditions.
Maintain 90 Ω differential impedance for DQ/DQS pairs and 50 Ω single-ended impedance for CA, CK_t, and CK_c signals. Avoid via stub lengths exceeding 100 mil on inner layers; use back-drilled vias if a thicker stack-up is required. Reference plane stitching vias should be placed every 200 mil along the DDR4 routing channel to maintain a continuous return path and minimize crosstalk.
合规信息
RoHS compliant per Worldway Electronics and DigiKey listings. REACH, halogen-free, and conflict-mineral status not documented on verified sources; confirm against Micron material declaration. AEC-Q100 not applicable for industrial temperature grade; AEC-Q100 qualified automotive DDR4 parts would be required for automotive deployments.
