MT40A1G16TD-062E vs H5ANAG6NCJR-XNC 对比
详细并排对比 MT40A1G16TD-062E 出自 Micron Technology 和 H5ANAG6NCJR-XNC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MT40A1G16TD-062E | H5ANAG6NCJR-XNC |
|---|---|---|
| 品牌 | Micron Technology | SK hynix |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $18.41 | $84.97 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 16 Gbit | 16 Gbit |
| 存储组织 | 1G x 16 | — |
| Clock Frequency | 1.6 GHz | — |
| Access Time | 19 ns | — |
| 接口 | POD12 (1.2V pseudo open-drain) | Parallel |
| VDD Supply Voltage | 1.2 V +/- 60 mV | — |
| VDDQ Supply Voltage | 1.2 V +/- 60 mV | — |
| VPP Supply Voltage | 2.5 V, -125 mV, +250 mV | — |
| Bank Architecture | 8 banks (x16 configuration) | — |
| VREFDQ | On-die, internal, adjustable generation | — |
| Refresh | 8192-cycle, 64 ms up to 85C; 32 ms from 85C to 95C | — |
| 工作温度 | TC maximum up to 95 C | — |
| 封装 | 96-ball FBGA (7.5 x 13 mm) | FBGA-96 |
| 安装类型 | Surface Mount | Surface Mount |
| Speed Grade | -062E | — |
| Product Line Suffix | AAT:F (automotive AEC grade available per Micron catalog) | — |
| Memory Organization | — | 1G x 16 |
| 数据速率 | — | 3200 Mbps/pin |
| Supply Voltage Range | — | 1.14 V to 1.26 V (VDD/VDDQ) |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask Function | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| Write Leveling | — | Yes |
| Packaging | — | Tray |
| RoHS 状态 | — | Compliant |