MT40A1G16TD-062E vs H5ANAG6NCJR-XNC Comparison

Detailed side-by-side comparison of MT40A1G16TD-062E by Micron Technology and H5ANAG6NCJR-XNC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT40A1G16TD-062E MT40A1G16TD-062E - 16Gb DDR4-3200 x16 SDRAM FBGA | Micron

MT40A1G16TD-062E - 16Gb DDR4-3200 x16 SDRAM FBGA | Micron

MT40A1G16TD-062E ✓ Active
SK hynix
H5ANAG6NCJR-XNC H5ANAG6NCJR-XNC - 16Gb DDR4-3200 SDRAM x16 | SK Hynix

H5ANAG6NCJR-XNC - 16Gb DDR4-3200 SDRAM x16 | SK Hynix

H5ANAG6NCJR-XNC ✓ Active

Specification Comparison

Parameter MT40A1G16TD-062E H5ANAG6NCJR-XNC
Brand Micron Technology SK hynix
Category DRAM Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $18.41 $84.97
Memory Type DDR4 SDRAM DDR4 SDRAM
Memory Size 16 Gbit 16 Gbit
Organization 1G x 16 —
Clock Frequency 1.6 GHz —
Access Time 19 ns —
Interface POD12 (1.2V pseudo open-drain) Parallel
VDD Supply Voltage 1.2 V +/- 60 mV —
VDDQ Supply Voltage 1.2 V +/- 60 mV —
VPP Supply Voltage 2.5 V, -125 mV, +250 mV —
Bank Architecture 8 banks (x16 configuration) —
VREFDQ On-die, internal, adjustable generation —
Refresh 8192-cycle, 64 ms up to 85C; 32 ms from 85C to 95C —
Operating Temperature TC maximum up to 95 C —
Package 96-ball FBGA (7.5 x 13 mm) FBGA-96
Mounting Type Surface Mount Surface Mount
Speed Grade -062E —
Product Line Suffix AAT:F (automotive AEC grade available per Micron catalog) —
Memory Organization — 1G x 16
Data Rate — 3200 Mbps/pin
Supply Voltage Range — 1.14 V to 1.26 V (VDD/VDDQ)
Auto Self-Refresh — Yes
Auto Precharge — Yes
Asynchronous Reset — Yes
Data Mask Function — Yes
Dynamic On-Chip Termination (ODT) — Yes
ZQ Calibration — Yes
CRC Function — Yes
Write Leveling — Yes
Packaging — Tray
RoHS Status — Compliant

Datasheets & Resources

Browse All Products Create BOM Request Quote