MT40A1G8SA-062E vs H5AN8G8NDJR-XNC 对比
详细并排对比 MT40A1G8SA-062E 出自 Micron Technology 和 H5AN8G8NDJR-XNC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MT40A1G8SA-062E | H5AN8G8NDJR-XNC |
|---|---|---|
| 品牌 | Micron Technology | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.05 | $24.50 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | — |
| 存储组织 | 1G x 8 | — |
| 数据速率 | 3200 MT/s (DDR4-3200) | 3200 MT/s (DDR4-3200) |
| Clock Frequency | 1.6 GHz | 1.6 GHz (I/O clock) |
| Access Time (CAS Latency) | CL22 at 3200 MT/s | — |
| Row Access Time | 19 ns | — |
| VDD / VDDQ | 1.2 V +/-60 mV | — |
| VPP | 2.5 V, -125 mV, +250 mV | — |
| Internal Banks | 16 banks (4 bank groups x 4 banks) | — |
| Refresh | 8192-cycle; 64 ms (0-85C), 32 ms (85-95C), 16 ms (>95C) | — |
| 工作温度 | 0C to +95C (CT range; IT: -40C to +95C) | — |
| I/O Type | 1.2 V pseudo open-drain | — |
| Burst Length | BL8, BC4 (burst chop) | — |
| 封装 | 78-ball FBGA (7.5 x 11 mm) | FBGA-78 (7.5 x 11 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 特性 | Auto self-refresh, write leveling, dynamic ODT, CRC, auto precharge, ZQ calibration, on-die adjustable VREFDQ | — |
| 存储容量 | — | 8 Gbit (1 G x 8) |
| Supply Voltage (VDD) | — | 1.14 V to 1.26 V (nominal 1.2 V) |
| I/O Voltage (VDDQ) | — | 1.14 V to 1.26 V (nominal 1.2 V) |
| Operating Temperature (TC) | — | 0°C to +95°C |
| Memory Organization | — | 1G x 8 |
| 接口 | — | Parallel |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Packaging | — | Tray |
| Status | — | Active |