MT40A2G8AG-062E vs H5ANAG8NBJR-PBC 对比
详细并排对比 MT40A2G8AG-062E 出自 Micron Technology 和 H5ANAG8NBJR-PBC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MT40A2G8AG-062E | H5ANAG8NBJR-PBC |
|---|---|---|
| 品牌 | Micron Technology | SK hynix |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $9.75 | $31.50 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 16 Gbit (2 GB) |
| 存储组织 | 2G x 8 | x8 |
| Speed | DDR4-3200 (3200 MT/s) | — |
| Clock Frequency | 1600 MHz | — |
| Access Time (Clock Cycle Time) | 0.625 ns (tCK) | — |
| CAS 延迟 | CL22 (DDR4-3200) | — |
| Access Time | 19 ns | — |
| Supply Voltage VDD | 1.2 V | — |
| I/O Interface | POD12 (1.2 V pseudo-open drain) | — |
| VPP Voltage | 2.5 V | — |
| Number of Banks | 16 (4 bank groups x 4 banks) | — |
| Operating Temperature (AUT grade) | -40C to +95C (per Micron grade table) | — |
| 封装 | 78-FBGA (7.5 x 11 mm) | FBGA-78 (7.5 mm x 11 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | Compliant (Lead-Free & Halogen-Free per Hynix family datasheet) |
| Die Revision | AG (current generation) | BJR |
| Supply Voltage (VDD) | — | 1.2 V |
| Speed Grade / Data Rate | — | PBC suffix, DDR4-2666 class |
| Bank Architecture | — | 16 banks in 4 bank groups (DDR4 standard) |
| Prefetch | — | 8n |
| 接口类型 | — | Parallel, SSTL12 |
| 工作温度 | — | [DATA_NEEDED: operating temperature range] |
| CAS Latency (typical bin) | — | [DATA_NEEDED: CAS latency] |
| Refresh | — | Self refresh, 1x/2x/4x refresh modes |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |
| Standard Package Quantity | — | [DATA_NEEDED: standard quantity] |