MT40A2G8AG-062E vs H5ANAG8NBJR-PBC Comparison
Detailed side-by-side comparison of MT40A2G8AG-062E by Micron Technology and H5ANAG8NBJR-PBC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | MT40A2G8AG-062E | H5ANAG8NBJR-PBC |
|---|---|---|
| Brand | Micron Technology | SK hynix |
| Category | Memory ICs | DRAM |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $9.75 | $31.50 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 16 Gbit (2 GB) |
| Organization | 2G x 8 | x8 |
| Speed | DDR4-3200 (3200 MT/s) | — |
| Clock Frequency | 1600 MHz | — |
| Access Time (Clock Cycle Time) | 0.625 ns (tCK) | — |
| CAS Latency | CL22 (DDR4-3200) | — |
| Access Time | 19 ns | — |
| Supply Voltage VDD | 1.2 V | — |
| I/O Interface | POD12 (1.2 V pseudo-open drain) | — |
| VPP Voltage | 2.5 V | — |
| Number of Banks | 16 (4 bank groups x 4 banks) | — |
| Operating Temperature (AUT grade) | -40C to +95C (per Micron grade table) | — |
| Package | 78-FBGA (7.5 x 11 mm) | FBGA-78 (7.5 mm x 11 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant (Lead-Free & Halogen-Free per Hynix family datasheet) |
| Die Revision | AG (current generation) | BJR |
| Supply Voltage (VDD) | — | 1.2 V |
| Speed Grade / Data Rate | — | PBC suffix, DDR4-2666 class |
| Bank Architecture | — | 16 banks in 4 bank groups (DDR4 standard) |
| Prefetch | — | 8n |
| Interface Type | — | Parallel, SSTL12 |
| Operating Temperature | — | [DATA_NEEDED: operating temperature range] |
| CAS Latency (typical bin) | — | [DATA_NEEDED: CAS latency] |
| Refresh | — | Self refresh, 1x/2x/4x refresh modes |
| MSL Level | — | [DATA_NEEDED: moisture sensitivity level] |
| Standard Package Quantity | — | [DATA_NEEDED: standard quantity] |