MT40A512M16AD-062E vs NT5AD512M16C4-JRU 对比
详细并排对比 MT40A512M16AD-062E 出自 Micron Technology 和 NT5AD512M16C4-JRU 出自 Nanya Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT40A512M16AD-062E - 8Gbit DDR4 SDRAM x16 3200MT/s | Micron
MT40A512M16AD-062E ✓ 量产中Nanya Technology
NT5AD512M16C4-JRU - DDR4 8Gb 512Mx16 Industrial SDRAM | Nanya
NT5AD512M16C4-JRU ✓ 量产中规格对比
| 参数 | MT40A512M16AD-062E | NT5AD512M16C4-JRU |
|---|---|---|
| 品牌 | Micron Technology | Nanya Technology |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $9.20 | $83.00 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 8 Gbit | — |
| 存储组织 | 512M x 16 | 512M x 16 |
| Clock Frequency | 1.6 GHz | 1600 MHz (3200 Mbps data rate) |
| Access Time (Row Cycle) | 19 ns | — |
| 接口 | Parallel (POD) | CMOS, DDR4 |
| 封装 | 96-FBGA (7.5 mm x 13.5 mm) | 96-ball FBGA (PBGA96) |
| 安装类型 | Surface Mount | Surface Mount |
| Automotive Qualification | AUT:E (automotive variant) | — |
| Speed Grade | -062E | — |
| 电源电压 | [DATA_NEEDED: core supply voltage (VDD)] | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | -40 C to +95 C (industrial grade) |
| Prefetch Architecture | 8n with bank groups | — |
| HS Code (USHTS) | 8542320071 | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Green Product (per Nanya product page) |
| Standard Pack Quantity | [DATA_NEEDED: reel quantity] | — |
| Density | — | 8 Gbit |
| CAS Latency (CL) | — | 22 at 1600 MHz |
| Supply Voltage (VDD) | — | 1.2 V |
| Auto Self-Refresh | — | Yes |
| Built-in Temperature Sensor | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask (DM) | — | Yes |
| Write Leveling | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |