MT40A512M16AD-062E vs NT5AD512M16C4-JRU Comparison

Detailed side-by-side comparison of MT40A512M16AD-062E by Micron Technology and NT5AD512M16C4-JRU by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT40A512M16AD-062E MT40A512M16AD-062E - 8Gbit DDR4 SDRAM x16 3200MT/s | Micron

MT40A512M16AD-062E - 8Gbit DDR4 SDRAM x16 3200MT/s | Micron

MT40A512M16AD-062E ✓ Active
Nanya Technology
NT5AD512M16C4-JRU NT5AD512M16C4-JRU - DDR4 8Gb 512Mx16 Industrial SDRAM | Nanya

NT5AD512M16C4-JRU - DDR4 8Gb 512Mx16 Industrial SDRAM | Nanya

NT5AD512M16C4-JRU ✓ Active

Specification Comparison

Parameter MT40A512M16AD-062E NT5AD512M16C4-JRU
Brand Micron Technology Nanya Technology
Category Memory ICs DRAM
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $9.20 $83.00
Memory Type DDR4 SDRAM DDR4 SDRAM
Memory Size 8 Gbit —
Organization 512M x 16 512M x 16
Clock Frequency 1.6 GHz 1600 MHz (3200 Mbps data rate)
Access Time (Row Cycle) 19 ns —
Interface Parallel (POD) CMOS, DDR4
Package 96-FBGA (7.5 mm x 13.5 mm) 96-ball FBGA (PBGA96)
Mounting Type Surface Mount Surface Mount
Automotive Qualification AUT:E (automotive variant) —
Speed Grade -062E —
Supply Voltage [DATA_NEEDED: core supply voltage (VDD)] —
Operating Temperature [DATA_NEEDED: operating temperature range] -40 C to +95 C (industrial grade)
Prefetch Architecture 8n with bank groups —
HS Code (USHTS) 8542320071 —
RoHS Status [DATA_NEEDED: RoHS status] Green Product (per Nanya product page)
Standard Pack Quantity [DATA_NEEDED: reel quantity] —
Density — 8 Gbit
CAS Latency (CL) — 22 at 1600 MHz
Supply Voltage (VDD) — 1.2 V
Auto Self-Refresh — Yes
Built-in Temperature Sensor — Yes
Auto Precharge — Yes
Asynchronous Reset — Yes
Data Mask (DM) — Yes
Write Leveling — Yes
Dynamic On-Chip Termination (ODT) — Yes
ZQ Calibration — Yes
CRC Function — Yes

Datasheets & Resources

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