MT40A512M8SA-062E vs K4A4G085WE-BCRC 对比
详细并排对比 MT40A512M8SA-062E 出自 Micron Technology 和 K4A4G085WE-BCRC 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MT40A512M8SA-062E | K4A4G085WE-BCRC |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $5.35 | $1.36 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 4 Gbit | — |
| 存储组织 | 512M x 8 | 512M x 8 |
| Clock Frequency | 1.6 GHz | — |
| 数据速率 | 3200 MT/s (DDR4-3200 class) | 2400 Mbps |
| Access Time | 13.75 ns | — |
| Write Cycle Time | 15 ns | — |
| VDD / VDDQ | 1.2 V +/-60 mV | — |
| VPP Supply | 2.5 V (-125 mV / +250 mV) | — |
| 接口 | Parallel, 1.2 V pseudo open-drain I/O | Parallel |
| VREFDQ | On-die internal adjustable generation | — |
| 封装 | 78-FBGA (7.5 x 11 mm), Z10B | FBGA-78 |
| 安装类型 | Surface Mount | Surface Mount |
| Operating Temperature (TC max) | up to 95 degrees C | — |
| Package Flow | :F (lead-free / RoHS) | — |
| 安装方式 | SMD/SMT | — |
| Density | — | 4 Gbit |
| Clock Cycle Time (tCK) | — | 0.833 ns |
| Supply Voltage (VDD) | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Core Voltage (VPP) | — | 2.5 V |
| Process Node Family | — | Samsung E-die |
| Bank Groups | — | 4n prefetch DDR4 architecture |
| 工作温度 | — | [DATA_NEEDED: Operating Temperature Range] |
| Refresh | — | 8n / 1X refresh (per JEDEC DDR4) |
| MSL 等级 | — | [DATA_NEEDED: Moisture Sensitivity Level] |
| RoHS 状态 | — | Compliant (per LCSC listing) |