MT40A512M8SA-062E vs K4A4G085WE-BCRC Comparison
Detailed side-by-side comparison of MT40A512M8SA-062E by Micron Technology and K4A4G085WE-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | MT40A512M8SA-062E | K4A4G085WE-BCRC |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.35 | $1.36 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 4 Gbit | — |
| Organization | 512M x 8 | 512M x 8 |
| Clock Frequency | 1.6 GHz | — |
| Data Rate | 3200 MT/s (DDR4-3200 class) | 2400 Mbps |
| Access Time | 13.75 ns | — |
| Write Cycle Time | 15 ns | — |
| VDD / VDDQ | 1.2 V +/-60 mV | — |
| VPP Supply | 2.5 V (-125 mV / +250 mV) | — |
| Interface | Parallel, 1.2 V pseudo open-drain I/O | Parallel |
| VREFDQ | On-die internal adjustable generation | — |
| Package | 78-FBGA (7.5 x 11 mm), Z10B | FBGA-78 |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature (TC max) | up to 95 degrees C | — |
| Package Flow | :F (lead-free / RoHS) | — |
| Mounting Style | SMD/SMT | — |
| Density | — | 4 Gbit |
| Clock Cycle Time (tCK) | — | 0.833 ns |
| Supply Voltage (VDD) | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Core Voltage (VPP) | — | 2.5 V |
| Process Node Family | — | Samsung E-die |
| Bank Groups | — | 4n prefetch DDR4 architecture |
| Operating Temperature | — | [DATA_NEEDED: Operating Temperature Range] |
| Refresh | — | 8n / 1X refresh (per JEDEC DDR4) |
| MSL Level | — | [DATA_NEEDED: Moisture Sensitivity Level] |
| RoHS Status | — | Compliant (per LCSC listing) |