MT40A512M8SA-062E vs NT5AD512M16C4-JRU 对比

详细并排对比 MT40A512M8SA-062E 出自 Micron Technology 和 NT5AD512M16C4-JRU 出自 Nanya Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT40A512M8SA-062E MT40A512M8SA-062E - 4Gb DDR4 SDRAM x8, 3200 | Micron

MT40A512M8SA-062E - 4Gb DDR4 SDRAM x8, 3200 | Micron

MT40A512M8SA-062E ✓ 量产中
Nanya Technology
NT5AD512M16C4-JRU NT5AD512M16C4-JRU - DDR4 8Gb 512Mx16 Industrial SDRAM | Nanya

NT5AD512M16C4-JRU - DDR4 8Gb 512Mx16 Industrial SDRAM | Nanya

NT5AD512M16C4-JRU ✓ 量产中

规格对比

参数 MT40A512M8SA-062E NT5AD512M16C4-JRU
品牌 Micron Technology Nanya Technology
分类 DRAM DRAM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $5.35 $83.00
存储器类型 DDR4 SDRAM DDR4 SDRAM
存储容量 4 Gbit —
存储组织 512M x 8 512M x 16
Clock Frequency 1.6 GHz 1600 MHz (3200 Mbps data rate)
数据速率 3200 MT/s (DDR4-3200 class) —
Access Time 13.75 ns —
Write Cycle Time 15 ns —
VDD / VDDQ 1.2 V +/-60 mV —
VPP Supply 2.5 V (-125 mV / +250 mV) —
接口 Parallel, 1.2 V pseudo open-drain I/O CMOS, DDR4
VREFDQ On-die internal adjustable generation —
封装 78-FBGA (7.5 x 11 mm), Z10B 96-ball FBGA (PBGA96)
安装类型 Surface Mount Surface Mount
Operating Temperature (TC max) up to 95 degrees C —
Package Flow :F (lead-free / RoHS) —
安装方式 SMD/SMT —
Density — 8 Gbit
CAS Latency (CL) — 22 at 1600 MHz
Supply Voltage (VDD) — 1.2 V
工作温度 — -40 C to +95 C (industrial grade)
Auto Self-Refresh — Yes
Built-in Temperature Sensor — Yes
Auto Precharge — Yes
Asynchronous Reset — Yes
Data Mask (DM) — Yes
Write Leveling — Yes
Dynamic On-Chip Termination (ODT) — Yes
ZQ Calibration — Yes
CRC Function — Yes
RoHS 状态 — Green Product (per Nanya product page)

数据手册与资源

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