MT40A512M8SA-062E vs NT5AD512M16C4-JRU Comparison

Detailed side-by-side comparison of MT40A512M8SA-062E by Micron Technology and NT5AD512M16C4-JRU by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT40A512M8SA-062E MT40A512M8SA-062E - 4Gb DDR4 SDRAM x8, 3200 | Micron

MT40A512M8SA-062E - 4Gb DDR4 SDRAM x8, 3200 | Micron

MT40A512M8SA-062E ✓ Active
Nanya Technology
NT5AD512M16C4-JRU NT5AD512M16C4-JRU - DDR4 8Gb 512Mx16 Industrial SDRAM | Nanya

NT5AD512M16C4-JRU - DDR4 8Gb 512Mx16 Industrial SDRAM | Nanya

NT5AD512M16C4-JRU ✓ Active

Specification Comparison

Parameter MT40A512M8SA-062E NT5AD512M16C4-JRU
Brand Micron Technology Nanya Technology
Category DRAM DRAM
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $5.35 $83.00
Memory Type DDR4 SDRAM DDR4 SDRAM
Memory Size 4 Gbit —
Organization 512M x 8 512M x 16
Clock Frequency 1.6 GHz 1600 MHz (3200 Mbps data rate)
Data Rate 3200 MT/s (DDR4-3200 class) —
Access Time 13.75 ns —
Write Cycle Time 15 ns —
VDD / VDDQ 1.2 V +/-60 mV —
VPP Supply 2.5 V (-125 mV / +250 mV) —
Interface Parallel, 1.2 V pseudo open-drain I/O CMOS, DDR4
VREFDQ On-die internal adjustable generation —
Package 78-FBGA (7.5 x 11 mm), Z10B 96-ball FBGA (PBGA96)
Mounting Type Surface Mount Surface Mount
Operating Temperature (TC max) up to 95 degrees C —
Package Flow :F (lead-free / RoHS) —
Mounting Style SMD/SMT —
Density — 8 Gbit
CAS Latency (CL) — 22 at 1600 MHz
Supply Voltage (VDD) — 1.2 V
Operating Temperature — -40 C to +95 C (industrial grade)
Auto Self-Refresh — Yes
Built-in Temperature Sensor — Yes
Auto Precharge — Yes
Asynchronous Reset — Yes
Data Mask (DM) — Yes
Write Leveling — Yes
Dynamic On-Chip Termination (ODT) — Yes
ZQ Calibration — Yes
CRC Function — Yes
RoHS Status — Green Product (per Nanya product page)

Datasheets & Resources

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