MT47H64M16HR-25E IT:H vs W971GG6SB25I 对比
详细并排对比 MT47H64M16HR-25E IT:H 出自 Micron Technology 和 W971GG6SB25I 出自 Winbond。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT47H64M16HR-25E IT:H - 1Gb DDR2 SDRAM 400MHz 84-FBGA | Micron
MT47H64M16HR-25E IT:H ✓ 量产中
规格对比
| 参数 | MT47H64M16HR-25E IT:H | W971GG6SB25I |
|---|---|---|
| 品牌 | Micron Technology | Winbond |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.21 | $1.48 |
| 存储器类型 | DDR2 SDRAM (volatile) | Volatile, DDR2 SDRAM |
| 存储容量 | 1 Gbit (64M x 16) | — |
| 存储组织 | 8 Meg x 16 x 8 banks | 8M words × 8 banks × 16 bits |
| Clock Frequency | 400 MHz | 200 MHz |
| Access Time | 400 ps | — |
| Data Rate (effective) | 800 MT/s | — |
| 接口 | Parallel (byte-wide) | — |
| Prefetch Architecture | 4n-bit | — |
| Supply Voltage VDD | 1.8 V ±0.1 V | — |
| Supply Voltage VDDQ | 1.8 V ±0.1 V (SSTL_18) | — |
| I/O Standard | JEDEC SSTL_18-compatible | — |
| Data Strobe | Differential (DQS, DQS#) | — |
| 封装 | 84-TFBGA (8 mm x 12.5 mm) | — |
| 工作温度 | -40C to +85C (Industrial, IT:H) | -40 °C to +85 °C (industrial) |
| RoHS 状态 | Compliant (lead-free) | Compliant (lead-free) |
| Density | — | 1 Gbit (1,073,741,824 bits) |
| Maximum Data Rate | — | 400 MT/s (DDR2-800) |
| Random Access Time | — | 57.5 ns |
| Bus Width | — | 16 bits |
| Supply Voltage (VDD / V_DDQ) | — | 1.8 V (JEDEC SSTL-18) |
| 接口类型 | — | Parallel, SSTL-18 |
| Package Type | — | 84-WBGA / 84-TFBGA, 8.0 × 12.5 mm |
| 安装类型 | — | Surface Mount |
| Number of Pins / Balls | — | 84 |
| Bank Count | — | 8 |
| On-Die Termination (ODT) | — | Yes (per JEDEC DDR2) |
| Refresh | — | Auto-refresh and self-refresh |
| Speed Grade Suffix | — | 25I (DDR2-800 6-6-6, industrial) |
| Compliance | — | JEDEC DDR2 standard |