MT58L64L32FT-10 - 2Mb Sync Burst SRAM 10ns 66MHz | Micron
料号： MT58L64L32FT-10 ✗ 停产| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
MT58L64L32FT-10 概述
A synchronous burst SRAM is a static random-access memory that synchronizes address, data, and control inputs to an external clock and generates burst addresses internally, making it a key member of the memory IC family that sits within the broader semiconductor hierarchy (SRAM -> static RAM -> volatile memory -> memory IC -> integrated circuit). Unlike asynchronous SRAMs, burst-mode devices such as the MT58L64L32FT-10 prefetch sequential addresses, reducing effective access time for cache-like workloads and pipelined bus masters.
Key features include single +3.3 V power supply (VDD, +0.3 V/-0.165 V tolerance), a separate isolated +2.5 V or 3.3 V output buffer supply (VDDQ) for I/O voltage flexibility, fast clock-to-output and OE# access times, individual BYTE WRITE enable controls, and SNOOZE MODE for reduced-power standby. Common data input/output pins simplify bus routing on 32-bit and 36-bit (byte-parity) systems.
Architecturally, the flow-through (non-pipelined) SyncBurst design presents data on the same cycle the address is captured, eliminating pipeline latency and simplifying timing closure for controllers that expect zero-wait-state reads and writes. Registered outputs driven by the internal burst address counter support linear, interleaved, and alternate burst sequences per industry-standard processor burst orders.
Typical applications include network router and switch line-card buffering, FPGA and DSP external memory expansion, telecom equipment control-plane memory, industrial controllers, and test instrumentation where deterministic 10 ns access and 66 MHz burst throughput are required.
Design considerations: tie VDDQ to the host bus I/O voltage (2.5 V or 3.3 V), use SNOOZE MODE (asserting ZZ) to cut standby power during idle periods, and verify burst-order configuration straps against the host processor (linear vs. interleaved) before layout freeze.
This page synthesizes distributor availability data, same-family drop-in speed/temperature variants, and practical design guidance not consolidated in the manufacturer datasheet.
直接替换替代料： MT58L64L32FT-10 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： MT58L64L32FT-10 （相同外形与封装尺寸） ——差异在于 Access Time, Memory Type, Organization.
快速对比工具——选择替代料号进行并排对比：
MT58L64L32FT-10IT
✅ 直接替换📋 参考替代料（不在目录中）
MT58L64L32FT-12
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MT58L64L32FT-8
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MT58L64L32FT-10 最大额定值与电气特性
| 存储器类型 | SRAM - Synchronous Burst (Flow-Through SyncBurst) |
| 存储容量 | 2 Mbit |
| 存储组织 | 64K x 32/36 (also 128K x 18) |
| Access Time | 10 ns |
| 最大时钟频率 | 66 MHz |
| 接口 | Parallel |
| Supply Voltage VDD | 3.3 V (+0.3 V/-0.165 V) |
| Output Buffer Supply VDDQ | 2.5 V isolated or 3.3 V |
| Write Control | Individual BYTE WRITE enables |
| Standby Feature | SNOOZE MODE reduced-power standby |
| Data I/O | Common data inputs and data outputs |
| Burst Modes | Linear and interleaved burst address sequences |
| 封装 | 100-TQFP (14 x 20.1 mm) |
| 安装类型 | Surface Mount |
| 工作温度 | 0C to +70C (commercial; -10IT variant industrial) |
MT58L64L32FT-10 100-tqfp (14 x 20.1 mm) 引脚配置指南
MT58L64L32FT-10（100-tqfp (14 x 20.1 mm) 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： MT58L64L32FT-10.
请参阅 数据手册 以查看完整引脚配置。
典型应用
MT58L64L32FT-10 适用于 6 应用s: Network Router and Switch Line Cards, FPGA External Memory Expansion, Telecom Control-Plane Memory, Industrial Control and Data Logging, Test and Measurement Instrumentation, Aerospace and Defense Legacy Sustaining.
Network Router and Switch Line Cards
The MT58L64L32FT-10 fits network line-card designs where packet buffers, lookup tables, or statistics counters demand deterministic synchronous access. Its 66 MHz burst clock and 10 ns access time keep pace with classic 32-bit backplane buses, while the 64K x 32/36 organization supports word-plus-parity schemes common in forwarding tables. The isolated 2.5 V VDDQ lets the SRAM I/O bank match ASIC or FPGA PHY voltages directly without level translators, and individual BYTE WRITE enables allow efficient field updates of route entries. SNOOZE MODE trims standby power on idle ports, reducing overall card thermal load in high-density chassis deployments.
推荐
FPGA External Memory Expansion
As a zero-wait-state flow-through synchronous burst SRAM, the MT58L64L32FT-10 is a natural external memory for FPGA applications needing more capacity than on-chip block RAM provides. The 66 MHz clock integrates easily with standard FPGA memory controllers, and the internal burst counter relieves the fabric from generating sequential addresses. The 2.5 V or 3.3 V VDDQ selection matches common Microchip/Microsemi ProASIC3 I/O banks, and the 10 ns flow-through latency simplifies timing closure compared to pipelined memories. Designers should configure the controller's burst order to match the SRAM's linear or interleaved mode and verify byte-write timing for 32-bit data paths.
推荐
Telecom Control-Plane Memory
Telecom control cards - alarms, configuration stores, and protocol state machines - benefit from the MT58L64L32FT-10's deterministic access and non-volatility-free simplicity. The 2-Mbit capacity covers generous state tables, while 10 ns access keeps control-loop latency low during failover processing. Individual BYTE WRITEs permit granular updates of status words without bus contention, and SNOOZE MODE reduces power in redundant standby cards that must preserve state. The commercial 0C to +70C grade suits central-office environments, while the -10IT variant covers outdoor cabinets at -40C to +85C without redesign, since both share the identical 100-TQFP footprint.
推荐
Industrial Control and Data Logging
In industrial controllers and data loggers, the MT58L64L32FT-10 provides fast scratchpad memory for real-time sampling loops where FIFO buffering and lookup tables must respond within microseconds. The 66 MHz synchronous interface pairs cleanly with industrial FPGA or DSP controllers, and the 10 ns access time guarantees bounded latency for control algorithms. For harsh environments, the same-footprint MT58L64L32FT-10IT variant extends operation to -40C to +85C, letting one PCB design span cabinet and field installations. SNOOZE MODE cuts standby current in battery-backed logging nodes, and the 3.3 V single-supply operation simplifies power-tree design alongside standard industrial logic.
推荐
Test and Measurement Instrumentation
Oscilloscope, logic analyzer, and signal-generator front ends use fast SRAM to capture sample streams, and the MT58L64L32FT-10's 10 ns access with 66 MHz burst operation suits acquisition buffers on moderate-speed channels. The 64K x 32 organization supports 32-bit ADC/sample words plus parity, while the flow-through architecture gives capture controllers immediate data on the addressed cycle - valuable for trigger-position rewind logic. The isolated VDDQ output supply allows clean separation of analog-side I/O noise from the 3.3 V core rail, improving effective resolution, and BYTE WRITE enables support selective channel masking during multi-channel capture playback sequences.
推荐
Aerospace and Defense Legacy Sustaining
Defense and aerospace programs frequently sustain legacy FPGA boards that specify flow-through SyncBurst SRAM, and the MT58L64L32FT-10 remains a sourcing option for such sustaining builds. It complements radiation-tolerant Microchip RTAX families where board-level SRAM (rather than inherently rad-hard memory) provides working buffers. The deterministic 10 ns, zero-latency flow-through behavior simplifies worst-case timing analysis required in safety-critical certification, and the fixed commercial/industrial temperature grades map to standard program screening flows. Because the family is EOL, programs should place lifetime buys now; XAIPART stocks verified original inventory and can quote lot-specific date codes for configuration-controlled builds.
推荐
推荐产品汇总
工程参考数据： MT58L64L32FT-10 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MT58L64L32FT-10IT | MT58L64L32FT-12 | MT58L64L32FT-8 |
|---|---|---|---|---|
| Package | 100-TQFP (14 x 20.1 mm) | 100-TQFP (14 x 20.1 mm) - same | 100-TQFP (14 x 20.1 mm) - same | 100-TQFP (14 x 20.1 mm) - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Access Time | 10 ns | 10 ns | 12 ns | 8 ns |
| Memory Size / Organization | 2 Mbit, 64K x 32/36 | 2 Mbit, 64K x 32/36 | 2 Mbit, 64K x 32/36 | 2 Mbit, 64K x 32/36 |
| Supply Voltage VDD | 3.3 V (+0.3/-0.165 V) | 3.3 V (+0.3/-0.165 V) | 3.3 V (+0.3/-0.165 V) | 3.3 V (+0.3/-0.165 V) |
| VDDQ Output Supply | 2.5 V isolated or 3.3 V | 2.5 V isolated or 3.3 V | 2.5 V isolated or 3.3 V | 2.5 V isolated or 3.3 V |
| Operating Temperature | 0C to +70C | -40C to +85C (industrial) | 0C to +70C | 0C to +70C |
| Special Features | SNOOZE MODE, BYTE WRITE, flow-through burst | Identical feature set, industrial grade | Identical feature set, slower grade | Identical feature set, faster grade |
关键差异点
- Zero-latency flow-through read architecture （对比 MT58L64L32FT-12)
- Industrial temperature option without redesign （对比 MT58L64L32FT-10IT)
- Isolated 2.5 V VDDQ output supply （对比 MT58L64L32FT-8)
设计说明
Power the MT58L64L32FT-10 from a single 3.3 V rail within the +0.3 V/-0.165 V tolerance stated in the Micron datasheet, and connect VDDQ to the host bus I/O voltage (2.5 V or 3.3 V). Decouple VDD and VDDQ independently with 0.1 uF ceramic capacitors per supply pin pair plus bulk capacitance at the board entry. When using SNOOZE MODE for standby savings, remember the device requires a wake-up recovery interval before the first valid access - your controller must gate chip-enable during this window.
The 66 MHz burst interface has setup/hold windows around the clock that require matched-length routing on the address and control bus for trace lengths beyond a few centimeters. Keep clock traces shorter than data lines to avoid skew-induced timing violations, and series-terminate (22-33 ohm) drivers on heavily loaded shared data lines. Because this is a flow-through part, there is no pipeline latency margin to absorb timing errors - violations manifest immediately as capture failures, so perform full static timing analysis against the datasheet clock-to-output and setup parameters.
Two frequent integration mistakes: first, mismatched burst order - the SRAM's internal burst counter (linear vs. interleaved) must match the host processor's expected sequence, or reads will return scrambled sequential data; verify the mode configuration before layout release. Second, treating this as a pipelined part - the flow-through SyncBurst delivers data on the same addressed cycle, so controllers designed for pipelined SRAMs will misalign read data by one clock. Also confirm byte-lane mapping of the individual BYTE WRITE pins on 32-bit vs. 36-bit (parity) organizations.
合规信息
Compliance data for this EOL Micron SRAM was not present in the provided web data. Request material declarations from the supplier with your quote.
