MX30UF4G26AB vs MX30UF4G28AB 对比

详细并排对比 MX30UF4G26AB 出自 Macronix 和 MX30UF4G28AB 出自 Macronix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Macronix
MX30UF4G26AB MX30UF4G26AB - 1.8V 4Gbit SLC NAND Flash | Macronix

MX30UF4G26AB - 1.8V 4Gbit SLC NAND Flash | Macronix

MX30UF4G26AB ✓ 量产中
Macronix
MX30UF4G28AB MX30UF4G28AB - 4Gbit SLC Parallel NAND Flash | Macronix

MX30UF4G28AB - 4Gbit SLC Parallel NAND Flash | Macronix

MX30UF4G28AB ✓ 量产中

规格对比

参数 MX30UF4G26AB MX30UF4G28AB
品牌 Macronix Macronix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $4.25 $2.30
存储器类型 FLASH - NAND (SLC) FLASH - NAND (SLC)
Memory Density 4 Gbit (512 MB) —
Memory Organization 256M x 16 512M x 8
Supply Voltage (Vcc) 1.7 V to 1.95 V —
接口 Parallel (Asynchronous NAND) Parallel (asynchronous)
Access Time 25 ns —
Page Size [DATA_NEEDED: page size in bytes] 2048 bytes + 64 bytes spare (x8)
Block Size [DATA_NEEDED: block size in pages] [DATA_NEEDED: block size in pages]
工作温度 -40 C to +85 C -40 °C to +85 °C (industrial)
封装 63-VFBGA (9 x 11 mm) 48-pin TSOP-I (TI) / 63-ball VFBGA (XKI)
安装类型 Surface Mount Surface Mount
Compliance Standard ONFI 1.0 —
Cell Technology Single-Level Cell (SLC) —
Endurance (P/E Cycles) [DATA_NEEDED: typical endurance per block] —
Data Retention [DATA_NEEDED: data retention years] [DATA_NEEDED: retention years]
MSL 等级 3 3 (per JEDEC J-STD-020, typical for TSOP)
RoHS 状态 Compliant Compliant
存储容量 — 4 Gbit
Bus Width — x8 / x16 selectable
Access Time (tRC) — 25 ns (typical)
Supply Voltage (VCC) — 1.7 V to 1.95 V (1.8 V typ)
Technology — SLC (Single-Level Cell) NAND
Program/Erase Cycles — [DATA_NEEDED: endurance per block]

数据手册与资源

浏览全部产品 创建 BOM 获取报价