NT5AD512M16 vs NT5AD512M16A4-GZ 对比
详细并排对比 NT5AD512M16 出自 Nanya Technology 和 NT5AD512M16A4-GZ 出自 Nanya Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | NT5AD512M16 | NT5AD512M16A4-GZ |
|---|---|---|
| 品牌 | Nanya Technology | Nanya Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $73.75 | $8.50 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储组织 | 512M x 16 | 512M x 16 |
| Total Density | 8 Gbit | — |
| Supply Voltage (VDD) | 1.2 V | — |
| 数据速率 | 3200 Mbps (DDR4-3200) | — |
| 封装 | 96-ball FBGA | TFBGA-96 |
| Operating Temperature (Commercial) | 0°C to +95°C | — |
| Operating Temperature (Industrial) | -40°C to +95°C | — |
| Auto Self-Refresh | Yes | Yes |
| Built-in Temperature Sensor | Yes | Yes |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | Yes |
| RoHS | Compliant | Compliant |
| Density | — | 8Gb |
| 电源电压 | — | 1.2V |
| 最大时钟频率 | — | 1200 MHz |
| 数据总线宽度 | — | 16 bits |
| Number of Terminals | — | 96 |
| Interleaved Burst Length | — | 4, 8 |
| Access Mode | — | Four Bank Page Burst |
| 工作温度范围 | — | Commercial and Industrial |
| Lead-Free | — | Yes |
| Data Mask Function | — | Yes |
| Write Leveling Function | — | Yes |
| ZQ Calibration Function | — | Yes |