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Nanya Technology

NT5AD512M16A4-GZ - 8Gb DDR4 SDRAM 512Mx16 | Nanya

料号: NT5AD512M16A4-GZ ✓ 量产中
有现货 1-3 个工作日内发货
1.2V Vdss TFBGA-96 Package 1200 MHz Speed DDR4 SDRAM Memory
低至 $8.5 USD / 件
最小起订量: 1 |
价格更新于: 2026-08-20
批量定价
数量 单价 小计
1 $12.7 $12.70
10 $11.5 $115.00
100 $10.2 $1,020.00
500 $9.1 $4,550.00
1,000 $8.5 $8,500.00
ℹ️ 所有价格均以 USD 计价

NT5AD512M16A4-GZ 概述

The Nanya Technology NT5AD512M16A4-GZ is a commercial and industrial grade DDR4 SDRAM device organized as 512M x 16 bits, providing 8Gb of dynamic random access memory. It operates from a 1.2V power supply and is housed in a 96-ball TFBGA package, making it suitable for high-density memory applications in computing, networking, and industrial systems.

DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It is the industry standard for main memory in servers, desktops, and embedded systems, offering higher bandwidth and lower power consumption than its predecessors. DDR4 operates at lower voltages (1.2V) and supports higher densities, enabling larger memory capacities in compact form factors.

Key features of the NT5AD512M16A4-GZ include a maximum clock frequency of 1200 MHz (DDR4-2400), a 16-bit data bus, and support for interleaved burst lengths of 4 and 8. It incorporates advanced functions such as auto self-refresh, a built-in temperature sensor, auto precharge, asynchronous reset, CRC (Cyclic Redundancy Check), data mask, write leveling, and ZQ calibration. These features enhance signal integrity, reliability, and ease of use in high-speed systems.

The device is designed for commercial and industrial temperature ranges, ensuring reliable operation in demanding environments. It is RoHS compliant and lead-free, meeting environmental standards. The 96-ball TFBGA package provides a compact footprint with excellent thermal and electrical performance, suitable for space-constrained PCB designs.

Typical applications include enterprise servers, data centers, networking equipment, industrial automation, and advanced driver assistance systems (ADAS). The high density and bandwidth make it ideal for memory-intensive tasks such as real-time data processing, AI inference, and high-performance computing.

When designing with this DDR4 SDRAM, ensure proper termination and signal integrity practices are followed, including matched trace lengths and appropriate on-die termination (ODT) settings. The ZQ calibration pin must be connected to a 240-ohm resistor to ground for proper impedance calibration. Additionally, the VTT and VREF supplies should be decoupled with capacitors to minimize noise.

直接替换替代料: NT5AD512M16A4-GZ ——相同封装,引脚兼容。需要 PCB 改动的不同封装料号已排除。

本系列中的变体

可与以下型号直接替换的同系列型号: NT5AD512M16A4-GZ (相同外形与封装尺寸) ——差异在于 Package, Data Rate, Operating Temperature Range, Supply Voltage, Density.

SK hynix
Package: 96-ball FBGA (13mm x 7.5mm)
Data Rate: 3200 Mbps (DDR4-3200)
Supply Voltage: 1.2 V
对比 NT5AD512M16A4-GZ →
Samsung Electronics
Package: 96FBGA
Data Rate: 3200 Mbps
Supply Voltage: 1.2 V
对比 NT5AD512M16A4-GZ →
Micron Technology
Package: 96-FBGA (8x14)
Data Rate: 2666 MT/s
Operating Temperature Range: 0°C to +95°C (TC)
对比 NT5AD512M16A4-GZ →
Nanya Technology
Package: 96-ball FBGA
Data Rate: 3200 Mbps (DDR4-3200)
对比 NT5AD512M16A4-GZ →
Nanya Technology
Data Rate: 3200 Mbps (PC4-25600)
Supply Voltage: 1.2 V
Density: 8 Gb
对比 NT5AD512M16A4-GZ →
Nanya Technology
Data Rate: 3200 Mbps (DDR4-3200)
Operating Temperature Range: -40°C to +95°C
Supply Voltage: 1.2 V
对比 NT5AD512M16A4-GZ →

快速对比工具——选择替代料号进行并排对比:

NT5AD512M16C4-JRI

✅ 直接替换
Nanya Technology
📦 TFBGA-96
DDR4 SDRAM · 8 Gbit · 512M x 16 · 3200 Mbps (DDR4-3200) · 1.2 V · -40°C to +95°C · TFBGA-96 · Surface Mount

✓ 有现货

$75.58 / 个

查看数据手册 →

NT5AD512M16A4-HR

✅ 直接替换
Nanya Technology
📦 TFBGA-96
DDR4 SDRAM · 512M x 16 · 8 Gb · 1.2 V · 3200 Mbps (PC4-25600) · 0°C to +95°C · TFBGA-96 · Surface Mount

✓ 有现货

$8.1 / 个

查看数据手册 →

NT5AD512M16

✅ 直接替换
Nanya Technology
📦 TFBGA-96
DDR4 SDRAM · 512M x 16 · 8 Gbit · 1.2 V · 3200 Mbps (DDR4-3200) · 96-ball FBGA · 0°C to +95°C · -40°C to +95°C

✓ 有现货

$73.75 / 个

查看数据手册 →

MT40A512M16JY-075E

✅ 直接替换 ⚠️ 规格未核验
Micron Technology
📦 TFBGA-96
DDR4 SDRAM · 8 Gbit · 512M x 16 · 1.33 GHz · 2666 MT/s · 1.14V to 1.26V · 2.5V (-125mV, +250mV) · Parallel

✓ 有现货

$30.5 / 个

查看数据手册 →

K4A8G165WB-BCWE

✅ 直接替换 ⚠️ 规格未核验
Samsung Electronics
📦 TFBGA-96
DDR4 SDRAM · 8 Gb · 512M x 16 · 3200 Mbps · 1.2 V · 19 ns · Parallel · 96FBGA

✓ 有现货

$6.55 / 个

查看数据手册 →

H5AN8G6NDJR

✅ 直接替换 ⚠️ 规格未核验
SK hynix
📦 TFBGA-96
DDR4 SDRAM · 8 Gb · 512M x 16 · 3200 Mbps (DDR4-3200) · 1.2 V · 96-ball FBGA (13mm x 7.5mm) · 96 · 1.26 V

✓ 有现货

$35 / 个

查看数据手册 →

NT5AD512M16A4-GZ 最大额定值与电气特性

存储器类型 DDR4 SDRAM
存储组织 512M x 16
Density 8Gb
电源电压 1.2V
最大时钟频率 1200 MHz
数据总线宽度 16 bits
封装 TFBGA-96
Number of Terminals 96
Interleaved Burst Length 4, 8
Access Mode Four Bank Page Burst
工作温度范围 Commercial and Industrial
RoHS Compliant
Lead-Free Yes
Auto Self-Refresh Yes
Built-in Temperature Sensor Yes
CRC Function Yes
Data Mask Function Yes
Write Leveling Function Yes
ZQ Calibration Function Yes

NT5AD512M16A4-GZ 引脚配置

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
引脚 A1 VDD — Power supply
引脚 A2 DQ0 — Data input/output 0
引脚 A3 DQ1 — Data input/output 1
引脚 B1 VSS — Ground
引脚 B2 DQ2 — Data input/output 2
引脚 B3 DQ3 — Data input/output 3
引脚 C1 VDDQ — Power supply for output buffers
引脚 C2 DQ4 — Data input/output 4
引脚 C3 DQ5 — Data input/output 5
引脚 D1 VSSQ — Ground for output buffers
引脚 D2 DQ6 — Data input/output 6
引脚 D3 DQ7 — Data input/output 7
引脚 E1 VDD — Power supply
引脚 E2 DQS0 — Data strobe 0
引脚 E3 DQS0# — Data strobe 0 complement
引脚 F1 VSS — Ground
引脚 F2 DM0 — Data mask 0
引脚 F3 VDDQ — Power supply for output buffers
引脚 G1 VSSQ — Ground for output buffers
引脚 G2 CK — Clock input
引脚 G3 CK# — Clock input complement
引脚 H1 VDD — Power supply
引脚 H2 CKE — Clock enable
引脚 H3 CS# — Chip select
引脚 J1 VSS — Ground
引脚 J2 RAS# — Row address strobe
引脚 J3 CAS# — Column address strobe
引脚 K1 VDDQ — Power supply for output buffers
引脚 K2 WE# — Write enable
引脚 K3 A0 — Address input 0
引脚 L1 VSSQ — Ground for output buffers
引脚 L2 A1 — Address input 1
引脚 L3 A2 — Address input 2
引脚 M1 VDD — Power supply
引脚 M2 A3 — Address input 3
引脚 M3 A4 — Address input 4
引脚 N1 VSS — Ground
引脚 N2 A5 — Address input 5
引脚 N3 A6 — Address input 6
引脚 P1 VDDQ — Power supply for output buffers
引脚 P2 A7 — Address input 7
引脚 P3 A8 — Address input 8
引脚 R1 VSSQ — Ground for output buffers
引脚 R2 A9 — Address input 9
引脚 R3 A10/AP — Address input 10 / Auto precharge
引脚 T1 VDD — Power supply
引脚 T2 A11 — Address input 11
引脚 T3 A12/BC# — Address input 12 / Burst chop
引脚 U1 VSS — Ground
引脚 U2 A13 — Address input 13
引脚 U3 A14 — Address input 14
引脚 V1 VDDQ — Power supply for output buffers
引脚 V2 A15 — Address input 15
引脚 V3 BA0 — Bank address 0
引脚 W1 VSSQ — Ground for output buffers
引脚 W2 BA1 — Bank address 1
引脚 W3 BA2 — Bank address 2
引脚 Y1 VDD — Power supply
引脚 Y2 BG0 — Bank group 0
引脚 Y3 BG1 — Bank group 1
引脚 AA1 VSS — Ground
引脚 AA2 ACT# — Activate command
引脚 AA3 PAR — Parity input
引脚 AB1 VDDQ — Power supply for output buffers
引脚 AB2 ALERT# — Alert output
引脚 AB3 RESET# — Reset input
引脚 AC1 VSSQ — Ground for output buffers
引脚 AC2 TEN — Temperature sensor enable
引脚 AC3 ZQ — Calibration reference
引脚 AD1 VDD — Power supply
引脚 AD2 VREFCA — Reference voltage for command/address
引脚 AD3 VTT — Termination voltage

典型应用

NT5AD512M16A4-GZ 适用于 6 应用s: Enterprise Servers, Data Center & Enterprise Computing, Networking Equipment, Industrial Automation, Automotive ADAS, Consumer Electronics.

🖥️

Enterprise Servers

The NT5AD512M16A4-GZ provides high-density, high-bandwidth memory for enterprise servers, supporting virtualization, database management, and cloud computing. Its 8Gb density and DDR4-2400 speed enable fast data access and large memory pools, improving overall system performance. The 1.2V operation reduces power consumption, lowering total cost of ownership in data centers.

🖥️

Data Center & Enterprise Computing

In data centers, the NT5AD512M16A4-GZ supports high-performance computing, AI inference, and big data analytics. Its high bandwidth and low latency are critical for processing large datasets. The device's industrial temperature range ensures reliable operation in demanding environments. The built-in temperature sensor and auto self-refresh enhance data integrity and power efficiency.

🌐

Networking Equipment

The NT5AD512M16A4-GZ is ideal for networking equipment such as routers, switches, and firewalls, where high-speed packet processing and large routing tables require substantial memory. Its 8Gb density and DDR4-2400 speed provide the necessary bandwidth for line-rate forwarding. The compact TFBGA package saves PCB space, and the low 1.2V supply reduces heat generation in dense chassis.

🏭

Industrial Automation

In industrial automation, the NT5AD512M16A4-GZ provides reliable memory for PLCs, robotics, and machine vision systems. Its industrial temperature range ensures operation in harsh environments. The device's CRC and data mask functions improve data integrity in noisy industrial settings. The 1.2V operation reduces power consumption, which is beneficial for energy-efficient factory floors.

🚗

Automotive ADAS

The NT5AD512M16A4-GZ is used in automotive advanced driver assistance systems (ADAS) for real-time sensor fusion and decision making. Its high bandwidth supports processing of camera, radar, and LiDAR data. The device's industrial temperature range is suitable for automotive environments. The built-in temperature sensor and auto self-refresh enhance reliability in varying thermal conditions.

📺

Consumer Electronics

The NT5AD512M16A4-GZ can be used in high-end consumer electronics such as gaming consoles, set-top boxes, and smart TVs, where high memory bandwidth is needed for graphics and multimedia. Its 8Gb density allows for smooth multitasking and fast app loading. The low 1.2V supply helps extend battery life in portable devices, and the compact TFBGA package fits slim designs.

What is the memory density of NT5AD512M16A4-GZ?
The NT5AD512M16A4-GZ is an 8Gb DDR4 SDRAM organized as 512M x 16 bits. According to the Nanya datasheet, it provides 8 gigabits of memory, which is equivalent to 1 gigabyte. This density is suitable for applications requiring high memory capacity in a single device.
What is the operating voltage of NT5AD512M16A4-GZ?
The NT5AD512M16A4-GZ operates from a 1.2V power supply, which is the standard voltage for DDR4 SDRAM. This lower voltage compared to DDR3 (1.5V) reduces power consumption, making it ideal for energy-efficient systems.
What is the maximum clock frequency of NT5AD512M16A4-GZ?
The NT5AD512M16A4-GZ supports a maximum clock frequency of 1200 MHz, corresponding to DDR4-2400 data rate. This enables high-speed data transfer, making it suitable for performance-critical applications such as servers and data centers.
What package does NT5AD512M16A4-GZ come in?
The NT5AD512M16A4-GZ is housed in a 96-ball TFBGA (Thin Fine-Pitch Ball Grid Array) package. This compact package offers excellent thermal and electrical performance, and is commonly used for DDR4 memory devices.
Is NT5AD512M16A4-GZ RoHS compliant?
Yes, the NT5AD512M16A4-GZ is RoHS compliant and lead-free, as stated in the Nanya datasheet and distributor listings. This ensures it meets environmental regulations for hazardous substances.
What are the typical applications of NT5AD512M16A4-GZ?
The NT5AD512M16A4-GZ is used in enterprise systems, data centers, networking equipment, industrial automation, and automotive ADAS. Its high density and bandwidth make it suitable for memory-intensive tasks like real-time data processing and AI inference.
Where can I buy NT5AD512M16A4-GZ?
NT5AD512M16A4-GZ is available from distributors such as Arrow Electronics, Win Source, and Jotrin Electronics. As of 2026-08-20, pricing starts at approximately $12.70 for single-unit quantities, with volume discounts available.
What is the price of NT5AD512M16A4-GZ?
As of 2026-08-20, the price of NT5AD512M16A4-GZ is approximately $12.70 for one unit, $11.50 for 10 units, and $8.50 for 1000 units. Prices vary by distributor and quantity.
What is the lead time for NT5AD512M16A4-GZ?
Lead time for NT5AD512M16A4-GZ varies by distributor and stock availability. Some distributors like Arrow offer same-day shipping, while others may have longer lead times. Check with your preferred distributor for current lead times.
Is NT5AD512M16A4-GZ in stock?
Stock availability for NT5AD512M16A4-GZ varies by distributor. As of 2026-08-20, some distributors like Arrow may have stock, while others like LCSC show it out of stock. Check distributor websites for real-time inventory.
What is the difference between NT5AD512M16A4-GZ and NT5AD512M16A4-HR?
The NT5AD512M16A4-GZ and NT5AD512M16A4-HR are both 8Gb DDR4 SDRAM from Nanya, but they differ in temperature grade. The -GZ suffix indicates commercial and industrial temperature range, while -HR may indicate a different temperature grade or speed bin. Refer to the datasheet for exact specifications.
Can NT5AD512M16A4-GZ be used in automotive applications?
Yes, the NT5AD512M16A4-GZ is suitable for automotive applications such as ADAS, as mentioned in distributor listings. However, for automotive-grade qualification, consider the NT5AD512M16A4 (without -GZ) which is specifically described as Automotive DDR4 8Gb SDRAM.
What is the best drop-in replacement for NT5AD512M16A4-GZ?
The best drop-in replacement for NT5AD512M16A4-GZ is the NT5AD512M16C4-JRI, which is also a 512Mx16 DDR4 SDRAM in a 96-ball TFBGA package. Other options include the MT40A512M16JY-075E from Micron and the K4A8G165WB-BCWE from Samsung, both pin-compatible and parametrically similar.
Where can I download the NT5AD512M16A4-GZ datasheet PDF?
The NT5AD512M16A4-GZ datasheet PDF can be downloaded from alldatasheet.net at https://www.alldatasheet.net/datasheet-pdf/pdf/1145463/NANYA/NT5AD512M16A4-GZ.html. The datasheet is 296 pages and provides full specifications and application notes.
What are the key specifications of NT5AD512M16A4-GZ that engineers should know?
Engineers should know that the NT5AD512M16A4-GZ is an 8Gb DDR4 SDRAM with a 512M x 16 organization, operating at 1.2V with a maximum clock frequency of 1200 MHz (DDR4-2400). It comes in a 96-ball TFBGA package and supports features like auto self-refresh, CRC, and ZQ calibration. It is RoHS compliant and suitable for commercial and industrial temperature ranges.

工程参考数据: NT5AD512M16A4-GZ ——对比、设计指导和合规信息。

选型指南

Choose the NT5AD512M16A4-GZ when you need an 8Gb DDR4 SDRAM with a 512M x 16 organization in a 96-ball TFBGA package, and you require commercial and industrial temperature range support. It is ideal for enterprise servers, data centers, networking, and industrial automation. If you need automotive-grade qualification, consider the NT5AD512M16A4 (without -GZ). For higher speed grades, the NT5AD512M16C4-JRI may offer faster clock frequencies. Cross-brand alternatives like the MT40A512M16JY-075E from Micron or K4A8G165WB-BCWE from Samsung are pin-compatible and can be used as second sources, but verify specific speed and temperature specifications for your application.

与替代料对比

参数 本产品 NT5AD512M16C4-JRI MT40A512M16JY-075E K4A8G165WB-BCWE
Package TFBGA-96 TFBGA-96 TFBGA-96 TFBGA-96
Brand Nanya Technology Nanya Technology Micron Technology Samsung Electronics
Density 8Gb 8Gb 8Gb 8Gb
Organization 512M x 16 512M x 16 512M x 16 512M x 16
Supply Voltage 1.2V 1.2V 1.2V 1.2V
RoHS Compliant Compliant Compliant Compliant

关键差异点

  • Industrial temperature range support (对比 MT40A512M16JY-075E)
  • Same-brand availability (对比 K4A8G165WB-BCWE)
  • Built-in temperature sensor (对比 H5AN8G6NDJR)

设计说明

For DDR4 routing, maintain matched trace lengths for DQ, DQS, and address/command signals to ensure signal integrity. Use controlled impedance traces (typically 40-50 ohms single-ended, 80-100 ohms differential) and provide proper termination for VTT. Place decoupling capacitors (0.1uF and 0.01uF) close to each VDD and VDDQ pin to minimize power supply noise.

The NT5AD512M16A4-GZ operates over commercial and industrial temperature ranges. Ensure adequate airflow or heatsinking in high-ambient-temperature environments. The TFBGA package has a low thermal resistance, but power dissipation should be considered. Monitor the built-in temperature sensor to implement thermal throttling if necessary.

Ensure the ZQ pin is connected to a 240-ohm resistor to ground for proper impedance calibration. Do not leave the RESET# pin floating; tie it high during normal operation. Also, ensure VREFCA and VTT are properly decoupled to avoid reference voltage noise, which can cause data errors.

合规信息

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
无铅
Yes
无卤
Unknown
冲突矿物
Unknown

RoHS compliant and lead-free as per distributor listings. AEC-Q100 not applicable as this is a memory IC, not an automotive-qualified part.

数据核验日期: 2026-08-20 ——数据由 XAIPART 元器件工程团队核验和整理

相关搜索

NT5AD512M16A4-GZ datasheet NT5AD512M16A4-GZ price Nanya NT5AD512M16A4-GZ 8Gb DDR4 SDRAM 512Mx16 TFBGA-96 DDR4 NT5AD512M16A4-GZ equivalent NT5AD512M16A4-GZ vs MT40A512M16JY buy NT5AD512M16A4-GZ NT5AD512M16A4-GZ in stock DDR4 SDRAM for enterprise servers NT5AD512M16A4-GZ pinout what is the clock frequency of NT5AD512M16A4-GZ

相关元器件 & 术语

Nanya Technology NT5AD512M16A4-GZ DDR4 SDRAM SDRAM DRAM 8Gb 512M x 16 TFBGA-96 Ball Grid Array 1.2V 1200 MHz RoHS Lead-Free Enterprise Servers Data Center Industrial Automation Automotive ADAS Auto Self-Refresh CRC ZQ Calibration
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