MT40A512M16TB-062E:J - 8Gb DDR4 SDRAM 1.6GHz | Micron
料号： MT40A512M16TB-062E:J ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $12.5 | $12.50 |
| 10 | $11.2 | $112.00 |
| 100 | $9.8 | $980.00 |
| 500 | $8.9 | $4,450.00 |
| 1,000 | $8.1 | $8,100.00 |
MT40A512M16TB-062E:J 概述
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of DDR memory, offering higher speed and lower voltage compared to DDR3. It uses a 1.2V power supply (VDD and VDDQ) with a separate 2.5V VPP for wordline boost, enabling faster data transfer rates while reducing power consumption. DDR4 features on-die ECC, bank grouping, and a 16n prefetch architecture, making it suitable for servers, desktops, and high-performance embedded systems.
Key features include VDD = VDDQ = 1.2V ±60mV, VPP = 2.5V (-125mV, +250mV), on-die internal adjustable VREFDQ generation, and 1.2V pseudo open-drain I/O. The device supports refresh times of 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, and 16ms at >95°C, ensuring reliable operation across temperature ranges. It also features 16 internal banks (x16: 2 groups of 4 banks each) and an 8n-bit prefetch architecture.
Technically, the MT40A512M16TB-062E:J utilizes Micron's advanced DRAM process technology, offering high-speed data transfer with low latency. The device supports programmable data strobe preambles, data strobe preamble training, and command/address latency (CAL), enabling fine-tuning for system optimization. Its 96-ball FBGA package provides excellent thermal and electrical performance, making it ideal for space-constrained designs.
Typical applications include high-performance computing, networking equipment, data centers, and embedded systems requiring large memory capacity and high bandwidth. The device is also suitable for industrial and automotive applications where reliability and temperature tolerance are critical.
When designing with this DDR4 SDRAM, ensure proper termination and signal integrity practices are followed, including impedance matching and decoupling capacitors near the power pins. The device requires a stable 1.2V supply and a 2.5V VPP supply, with careful attention to power sequencing during power-up and power-down.
This memory IC is RoHS compliant and lead-free, meeting environmental standards. It is available in tape and reel packaging for automated assembly.
直接替换替代料： MT40A512M16TB-062E:J ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： MT40A512M16TB-062E:J （相同外形与封装尺寸） ——差异在于 Package, Data Rate, Memory Size, Clock Frequency, Operating Temperature Range.
快速对比工具——选择替代料号进行并排对比：
MT40A512M16TB-062E:R
✅ 直接替换✓ 有现货
$60 / 个
查看数据手册 →MT40A512M16JY-07EAIT:B
✅ 直接替换✓ 有现货
$8.1 / 个
查看数据手册 →K4A8G165WB-BCTD
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$37 / 个
查看数据手册 →H5AN8G6NDJR-XNC
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$55.6818 / 个
查看数据手册 →NT5AD512M16C4-JR
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$73.75 / 个
查看数据手册 →MT40A512M16TB-062E:J 最大额定值与电气特性
| 存储器类型 | SDRAM - DDR4 |
| 存储容量 | 8Gbit (512M x 16) |
| Clock Frequency | 1.6 GHz |
| Access Time | 19 ns |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV |
| VPP Supply Voltage | 2.5V (-125mV, +250mV) |
| I/O Type | 1.2V pseudo open-drain |
| Refresh Time | 64ms at -40°C to 85°C; 32ms at >85°C to 95°C; 16ms at >95°C |
| Internal Banks (x16) | 8 (2 groups of 4 banks each) |
| Prefetch Architecture | 8n-bit |
| 封装 | 96-FBGA (7.5x13.5 mm) |
| 工作温度范围 | 0°C to 95°C |
| RoHS 状态 | Compliant |
| Lead-Free | Yes |
| 安装类型 | Surface Mount |
MT40A512M16TB-062E:J 引脚配置
| 引脚 A1 | VDD — Power supply (1.2V) |
| 引脚 A2 | DQ0 — Data input/output 0 |
| 引脚 A3 | DQ1 — Data input/output 1 |
| 引脚 B1 | VSS — Ground |
| 引脚 B2 | DQ2 — Data input/output 2 |
| 引脚 B3 | DQ3 — Data input/output 3 |
| 引脚 C1 | VDDQ — I/O power supply (1.2V) |
| 引脚 C2 | DQS0 — Data strobe 0 |
| 引脚 C3 | DQS0# — Data strobe 0 complement |
| 引脚 D1 | VSS — Ground |
| 引脚 D2 | A0 — Address input 0 |
| 引脚 D3 | A1 — Address input 1 |
典型应用
MT40A512M16TB-062E:J 适用于 6 应用s: High-Performance Computing, Networking Equipment, Data Center Storage, Embedded Systems, Telecommunications, Artificial Intelligence and Machine Learning.
High-Performance Computing
The MT40A512M16TB-062E:J provides 8Gb density and 1.6 GHz speed, making it ideal for servers and workstations requiring high memory bandwidth. Its low 1.2V operation reduces power consumption in data centers, while the 96-FBGA package enables high-density DIMM designs. The device supports advanced features like on-die ECC and bank grouping, enhancing reliability and performance in compute-intensive workloads.
推荐
Networking Equipment
In routers and switches, the MT40A512M16TB-062E:J offers high-speed data buffering and packet processing capabilities. Its 1.6 GHz clock and 19 ns access time ensure low latency, critical for network throughput. The device's low power consumption and small footprint make it suitable for compact line cards and edge devices. It supports multiple bank groups for efficient memory access patterns in network applications.
推荐
Data Center Storage
The MT40A512M16TB-062E:J is well-suited for SSD controllers and storage arrays, providing high bandwidth for caching and metadata operations. Its 8Gb density allows for large memory pools, while the 1.2V supply reduces power in dense storage systems. The device's temperature range of 0°C to 95°C supports typical data center environments. It also features on-die VREFDQ for improved signal integrity in high-speed interfaces.
推荐
Embedded Systems
For embedded applications like industrial controllers and medical devices, the MT40A512M16TB-062E:J offers a balance of performance and power efficiency. Its 1.2V operation and 96-FBGA package are ideal for space-constrained designs. The device supports extended temperature operation up to 95°C, making it suitable for harsh environments. It also provides reliable data integrity with on-die ECC and refresh management.
推荐
Telecommunications
In telecom infrastructure, the MT40A512M16TB-062E:J supports high-speed data processing and buffering in base stations and switches. Its 1.6 GHz speed and low latency are essential for real-time signal processing. The device's low power consumption helps reduce operational costs in remote sites. It also features programmable data strobe preambles for flexible timing control in complex systems.
推荐
Artificial Intelligence and Machine Learning
The MT40A512M16TB-062E:J provides high memory bandwidth for AI inference and training workloads. Its 8Gb density and 1.6 GHz speed enable large model storage and fast data access. The device's low power consumption is beneficial for edge AI devices. It supports multiple bank groups for efficient parallel access, improving performance in matrix operations.
推荐
推荐产品汇总
工程参考数据： MT40A512M16TB-062E:J ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MT40A512M16TB-062E:R | MT40A512M16JY-07EAIT:B | K4A8G165WB-BCTD | H5AN8G6NDJR-XNC | NT5AD512M16C4-JR |
|---|---|---|---|---|---|---|
| Package | 96-FBGA (7.5x13.5) | 96-FBGA (7.5x13.5) | 96-FBGA (7.5x13.5) | 96-FBGA (7.5x13.5) | 96-FBGA (7.5x13.5) | 96-FBGA (7.5x13.5) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics | SK Hynix | Nanya Technology |
| Memory Size | 8Gbit (512M x 16) | 8Gbit (512M x 16) | 8Gbit (512M x 16) | 8Gbit (512M x 16) | 8Gbit (512M x 16) | 8Gbit (512M x 16) |
| Clock Frequency | 1.6 GHz | 1.6 GHz | 1.6 GHz | 1.6 GHz | 1.6 GHz | 1.6 GHz |
| Access Time | 19 ns | 19 ns | 19 ns | 19 ns | 19 ns | 19 ns |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | 1.2V ±60mV | 1.2V ±60mV | 1.2V ±60mV | 1.2V ±60mV | 1.2V ±60mV |
| Operating Temperature Range | 0°C to 95°C | 0°C to 95°C | -40°C to 95°C | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
关键差异点
- Higher clock frequency (1.6 GHz) compared to some alternatives （对比 K4A8G165WB-BCTD)
- Industrial temperature grade option available （对比 MT40A512M16TB-062E:R)
- Same-brand drop-in alternatives ensure compatibility （对比 H5AN8G6NDJR-XNC)
设计说明
Ensure stable 1.2V VDD and VDDQ supplies with adequate decoupling capacitors (e.g., 0.1uF and 1uF) placed close to the power pins. The VPP supply at 2.5V must also be decoupled. Follow Micron's power-up sequence: VDD and VDDQ must ramp up together, followed by VPP. Incorrect sequencing can cause device damage.
For high-speed DDR4 signals, maintain controlled impedance (e.g., 40-50 ohms) for data, address, and control lines. Use differential routing for DQS and clock signals. Keep trace lengths matched within 100 mils to minimize skew. Place termination resistors (e.g., 40-60 ohms) for address and control lines to reduce reflections.
The MT40A512M16TB-062E:J operates up to 95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The 96-FBGA package has a thermal resistance of approximately 20°C/W; calculate junction temperature to stay within limits. Use thermal vias under the package to improve heat dissipation.
合规信息
RoHS compliant and lead-free per distributor listings. AEC-Q100 not applicable for commercial-grade DDR4.
