NT5AD512M16C4-JRU vs MT40A512M8SA-062E 对比
详细并排对比 NT5AD512M16C4-JRU 出自 Nanya Technology 和 MT40A512M8SA-062E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Nanya Technology
NT5AD512M16C4-JRU - DDR4 8Gb 512Mx16 Industrial SDRAM | Nanya
NT5AD512M16C4-JRU ✓ 量产中
规格对比
| 参数 | NT5AD512M16C4-JRU | MT40A512M8SA-062E |
|---|---|---|
| 品牌 | Nanya Technology | Micron Technology |
| 分类 | DRAM | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $83.00 | $5.35 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | — |
| 存储组织 | 512M x 16 | 512M x 8 |
| Clock Frequency | 1600 MHz (3200 Mbps data rate) | 1.6 GHz |
| CAS Latency (CL) | 22 at 1600 MHz | — |
| Supply Voltage (VDD) | 1.2 V | — |
| 封装 | 96-ball FBGA (PBGA96) | 78-FBGA (7.5 x 11 mm), Z10B |
| 工作温度 | -40 C to +95 C (industrial grade) | — |
| 接口 | CMOS, DDR4 | Parallel, 1.2 V pseudo open-drain I/O |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask (DM) | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Green Product (per Nanya product page) | — |
| 存储容量 | — | 4 Gbit |
| 数据速率 | — | 3200 MT/s (DDR4-3200 class) |
| Access Time | — | 13.75 ns |
| Write Cycle Time | — | 15 ns |
| VDD / VDDQ | — | 1.2 V +/-60 mV |
| VPP Supply | — | 2.5 V (-125 mV / +250 mV) |
| VREFDQ | — | On-die internal adjustable generation |
| Operating Temperature (TC max) | — | up to 95 degrees C |
| Package Flow | — | :F (lead-free / RoHS) |
| 安装方式 | — | SMD/SMT |